Trench-defined semiconductor structure

专利名称：Trench-defined semiconductor structure发明人：David L. Bergeron申请号：US06/565678申请日：19831227公开号：US04547793A公开日：19851015

摘要：An improved device isolated by a trench formed in an N conductivity typesemiconductor substrate is provided which has first and second spaced apart Pconductivity type regions butted to a sidewall of the trench. An N+ doped region isdisposed adjacent to the sidewall of the trench extending from the surface of thesemiconductor substrate to an N+ buried region and interposed between the first andsecond P type conductivity regions. The dopant concentration in the N+ doped region ishigher than that of the semiconductor substrate but not higher than the dopantconcentration of the N+ buried region. More particularly, a lateral PNP transistor,isolated within a trench formed in an N type conductivity semiconductor substrate havingan N+ buried region, has emitter and collector regions butted against a sidewall of thetrench, along with the transistor's base region. A highly doped N+ base segment isdisposed within the base region of the transistor adjacent to the sidewall of the trenchextending from the surface of the substrate to the N+ buried region, and interposedbetween the emitter and collector regions.

申请人：INTERNATIONAL BUSINESS MACHINES CORPORATION

代理人：Stephen J. Limanek

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