Technische Information / Technical InformationIGBT-ModuleIGBT-ModulesBSM100GB120DLCvorläufige Datenpreliminary dataHöchstzulässige Werte / Maximum rated valuesElektrische Eigenschaften / Electrical propertiesKollektor-Emitter-Sperrspannungcollector-emitter voltageKollektor-DauergleichstromDC-collector currentPeriodischer Kollektor Spitzenstromrepetitive peak collector currentGesamt-Verlustleistungtotal power dissipationGate-Emitter-Spitzenspannunggate-emitter peak voltageDauergleichstromDC forward currentPeriodischer Spitzenstrom tP = 1 msrepetitive peak forw. currentGrenzlastintegral der Diode2It - value, DiodeIsolations-Prüfspannunginsulation test voltageVR = 0V, tp = 10ms, TVj = 125°C TC = 80 °CTC = 25 °CtP = 1 ms, TC = 80°CVCESIC,nom.ICICRM1200100200200VAAATC=25°C, TransistorPtot0,78kWVGES +/- 20VVIF100AIFRM200A2It - kA2sRMS, f = 50 Hz, t = 1 min.VISOL2,5kVCharakteristische Werte / Characteristic valuesTransistor / TransistorKollektor-Emitter Sättigungsspannungcollector-emitter saturation voltageGate-Schwellenspannunggate threshold voltageGateladunggate chargeEingangskapazitätinput capacitanceRückwirkungskapazitätreverse transfer capacitanceKollektor-Emitter Reststromcollector-emitter cut-off currentIC = 100A, VGE = 15V, Tvj = 25°C IC = 100A, VGE = 15V, Tvj = 125°C IC = 4mA, VCE = VGE, Tvj = 25°CVGE(th)VCE satmin.--4,5typ.2,12,45,5max.2,6VV6,5V VGE = -15V...+15VQG-1,1-µCf = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0VCies-6,5-nFf = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0VVCE = 1200V, VGE = 0V, Tvj = 25°C VCE = 1200V, VGE = 0V, Tvj = 125°C CresICES----0,010,5--0,5nFmAmAGate-Emitter Reststrom VCE = 0V, VGE = 20V, Tvj = 25°C gate-emitter leakage currentIGES-400nAprepared by: Mark Münzerapproved by: Jens Thuraudate of publication: 02.12.1998revision: 1a1(8)
DB_BSM100GB120DLC.xls
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Technische Information / Technical InformationIGBT-ModuleIGBT-ModulesBSM100GB120DLCvorläufige Datenpreliminary dataCharakteristische Werte / Characteristic valuesTransistor / TransistorEinschaltverzögerungszeit (ind. Last)turn on delay time (inductive load)IC = 100A, VCE = 600VVGE = ±15V, RG = 6,8Ω, Tvj = 25°CVGE = ±15V, RG = 6,8Ω, Tvj = 125°CAnstiegszeit (induktive Last)rise time (inductive load)IC = 100A, VCE = 600VVGE = ±15V, RG = 6,8Ω, Tvj = 25°CVGE = ±15V, RG = 6,8Ω, Tvj = 125°CAbschaltverzögerungszeit (ind. Last)turn off delay time (inductive load)IC = 100A, VCE = 600VVGE = ±15V, RG = 6,8Ω, Tvj = 25°CVGE = ±15V, RG = 6,8Ω, Tvj = 125°CFallzeit (induktive Last)fall time (inductive load)IC = 100A, VCE = 600VVGE = ±15V, RG = 6,8Ω, Tvj = 25°CVGE = ±15V, RG = 6,8Ω, Tvj = 125°CEinschaltverlustenergie pro Pulsturn-on energy loss per pulseAbschaltverlustenergie pro Pulsturn-off energy loss per pulseKurzschlußverhaltenSC DataModulinduktivitätstray inductance moduleModul Leitungswiderstand, Anschlüsse – Chip module lead resistance, terminals – chipTC=25°CIC = 100A, VCE = 600V, VGE = 15V RG = 6,8W, Tvj = 125°C, LS = 60nH IC = 100A, VCE = 600V, VGE = 15VRG = 6,8Ω, Tvj = 125°C, LS = 60nHtP ≤ 10µsec, VGE ≤ 15V, RG = 6,8ΩTVj≤125°C, VCC=900V, VCEmax=VCES -LsCE ·dI/dtISCLsCE- - 65025- - AnHEoff-12-mWsEon-10-mWstf--0,060,08--td,off--0,350,40--tr--0,050,05--td,on--0,060,06--min.typ.max. µsµs µsµs µsµs µsµsRCC‘+EE‘-0,60-mΩCharakteristische Werte / Characteristic valuesDiode / DiodeDurchlaßspannungforward voltageRückstromspitzepeak reverse recovery currentIF = 100A, VGE = 0V, Tvj = 25°CIF = 100A, VGE = 0V, Tvj = 125°CIF = 100A, - diF/dt = 2700A/µsecVR = 600V, VGE = -15V, Tvj = 25°CVR = 600V, VGE = -15V, Tvj = 125°CSperrverzögerungsladungrecovered chargeIF = 100A, - diF/dt = 2700A/µsecVR = 600V, VGE = -15V, Tvj = 25°CVR = 600V, VGE = -15V, Tvj = 125°CAbschaltenergie pro Pulsreverse recovery energyIF = 100A, - diF/dt = 2700A/µsecVR = 600V, VGE = -15V, Tvj = 25°CVR = 600V, VGE = -15V, Tvj = 125°CErec--49--mWsmWsQr--1222--µAsµAsIRM--125155--AAVFmin.--typ.1,81,7max.2,3VV2(8)
DB_BSM100GB120DLC.xls
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Technische Information / Technical InformationIGBT-ModuleIGBT-ModulesBSM100GB120DLCvorläufige Datenpreliminary dataThermische Eigenschaften / Thermal propertiesmin.Innerer Wärmewiderstandthermal resistance, junction to caseTransistor / transistor, DCDiode/Diode, DCRthCKRthJC---typ.--0,01max.0,160,3-K/WK/WK/WÜbergangs-Wärmewiderstand pro Modul / per module λPaste = 1 W/m * K / λgrease = 1 W/m * Kthermal resistance, case to heatsinkHöchstzulässige Sperrschichttemperatur maximum junction temperatureBetriebstemperatur operation temperatureLagertemperatur storage temperatureTvj --150°CTop-40-125°CTstg-40-150°CMechanische Eigenschaften / Mechanical propertiesGehäuse, siehe Anlagecase, see appendixInnere Isolation internal insulationKriechstreckecreepage distance LuftstreckeclearanceCTIcomperative tracking indexAnzugsdrehmoment f. mech. Befestigungmounting torqueAnzugsdrehmoment f. elektr. Anschlüsseterminal connection torqueGewichtweightM1 terminals M6M22,55Nm3AL2O320mm11mm2756NmG420gMit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert.Sie gilt in Verbindung mit den zugehörigen Technischen Erläuterungen. This technical information specifies semiconductor devices but promises no characteristics. It is valid in combination with the belonging technical notes.3(8)
DB_BSM100GB120DLC.xls
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Technische Information / Technical InformationIGBT-ModuleIGBT-ModulesBSM100GB120DLCAusgangskennlinie (typisch) IC = f (VCE) Output characteristic (typical) VGE = 15Vvorläufige Datenpreliminary data200175Tj = 25°C150125Tj = 125°CIC [A]10075502500,00,51,01,52,02,53,03,54,0VCE [V]Ausgangskennlinienfeld (typisch) IC = f (VCE)Output characteristic (typical) Tvj = 125°C200175VGE = 17V150125VGE = 15VVGE = 13VVGE = 11VVGE = 9VVGE = 7VIC [A]10075502500,00,51,01,52,02,53,03,54,04,55,0VCE [V]4(8)
DB_BSM100GB120DLC.xls
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Technische Information / Technical InformationIGBT-ModuleIGBT-ModulesBSM100GB120DLCÜbertragungscharakteristik (typisch) IC = f (VGE)Transfer characteristic (typical) VCE = 20Vvorläufige Datenpreliminary data200175Tj = 25°C150125Tj = 125°CIC [A]100755025056789101112VGE [V]Durchlaßkennlinie der Inversdiode (typisch) IF = f (VF) Forward characteristic of inverse diode (typical)200175Tj = 25°C150125Tj = 125°CIF [A]10075502500,00,51,01,52,02,53,0VF [V]5(8)
DB_BSM100GB120DLC.xls
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Technische Information / Technical InformationIGBT-ModuleIGBT-ModulesBSM100GB120DLCvorläufige Datenpreliminary dataSchaltverluste (typisch) Eon = f (IC) , Eoff = f (IC) , Erec = f (IC)Switching losses (typical) VGE=15V, Rgon = Rgoff =6,8 Ω, VCE = 600V, Tj = 125°C 30Eoff25EonErec20E [mJ]151050020406080100120140160180200IC [A]Schaltverluste (typisch) Eon = f (RG) , Eoff = f (RG) , Erec = f (RG)Switching losses (typical) VGE=15V , IC = 100A , VCE = 600V , Tj = 125°C 40353025E [mJ]2015105005101520253035EoffEonErecRG [Ω]6(8)
DB_BSM100GB120DLC.xls
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Technische Information / Technical InformationIGBT-ModuleIGBT-ModulesBSM100GB120DLCvorläufige DatenTransienter Wärmewiderstand ZthJC = f (t)Transient thermal impedancepreliminary data10,1ZthJC[K / W]0,01Zth:DiodeZth:IGBT0,0010,0010,010,1110100t [sec]i ri [K/kW] : IGBTτi [sec] : IGBTri [K/kW] : Diodeτi [sec] : Diode171,260,00681,890,006254,240,029122,020,035334,430,04363,190,03340,061,01432,90,997Sicherer Arbeitsbereich (RBSOA) Reverse bias safe operation area (RBSOA) VGE = 15V, Rg = 6,8 Ohm, Tvj= 125°C250200IC [A]150IC,ModulIC,Chip1005000200400600800100012001400VCE [V]7(8)
DB_BSM100GB120DLC.xls
元器件交易网www.cecb2b.com
Technische Information / Technical Information
IGBT-ModuleIGBT-Modules
BSM100GB120DLC
vorläufige Datenpreliminary data
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