专利名称：Thin film device and its manufacturing
method
发明人：竹知 和重,岡本 守申请号：JP2015208279申请日：20151022公开号：JP6784969B2公开日：20201118
摘要：PROBLEM TO BE SOLVED: To solve the problem that in a conventional flexiblethin film device using a resin substrate, barrier performance of an inorganic insulating filmon the rear face of the resin substrate is low, because the inorganic insulating film needsto be formed at low temperatures in consideration of heat resistance of the resinsubstrate.SOLUTION: An inorganic insulating layer having high barrier properties isformed on a substrate having high heat resistance in a high temperature process, and aresin layer and a thin film element are formed on the inorganic insulating layer. After thecompletion of formation of the thin film element, the substrate having high heat
resistance is peeled from an interface between the substrate having high heat resistanceand the inorganic insulating film having high barrier properties by any method. Thereby, aflexible thin film device is enabled which has the inorganic insulating film having highbarrier properties formed on the rear face side of the resin layer. Such the structure canbe achieved by immersing a structure composed of thin film element/resin
substrate/high temperature film-formation inorganic insulating film/germanium oxidefilm/insulating substrate in water, and peeling the insulating substrate utilizing high-speed dissolution of a germanium oxide.SELECTED DRAWING: Figure 1
申请人：天馬微電子有限公司
地址：中華人民共和国広東省深▲セン▼市竜華区民治街道北駅社区留仙大道天馬大▲カ▼１９１８
国籍：CN
代理人：河野 英仁
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