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METHOD OF FABRICATION OF ALGE BONDING IN A WAFER

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专利名称:METHOD OF FABRICATION OF AL/GE

BONDING IN A WAFER PACKAGINGENVIRONMENT AND A PRODUCTPRODUCED THEREFROM

发明人:Steven S. NASIRI,Anthony F. Flannery, JR.申请号:US15364478申请日:20161130

公开号:US20170073223A1公开日:20170316

专利附图:

摘要:A method of bonding of germanium to aluminum between two substrates to

create a robust electrical and mechanical contact is disclosed. An aluminum-germaniumbond has the following unique combination of attributes: (1) it can form a hermetic seal;(2) it can be used to create an electrically conductive path between two substrates; (3) itcan be patterned so that this conduction path is localized; (4) the bond can be made withthe aluminum that is available as standard foundry CMOS process. This has the significantadvantage of allowing for wafer-level bonding or packaging without the addition of anyadditional process layers to the CMOS wafer.

申请人:INVENSENSE, INC.

地址:San Jose CA US

国籍:US

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