专利名称：Capacitor for semiconductor device and
method for manufacturing the same
发明人：Won Cheol Cho申请号：US09802910申请日：20010312
公开号：US20010018244A1公开日：20010830
摘要：A capacitor for a semiconductor device is disclosed with increased capacitancewhich is produced by a simplified manufacturing process. The capacitor has a storagenode electrode structure formed on the semiconductor device having impurity regionsfrom therein. The storage node electrode structure includes a buried layer formed in astorage node hole defined by the semiconductor device, the buried layer being in contactwith at least one impurity region, a bottom layer formed on the buried layer and
extending beyond the buried layer, a first cylindrical electrode having first walls upwardlyextending from the bottom layer, and second cylindrical electrodes having second wallsupwardly extending from the bottom layer and disposed on outer sides of the firstcylindrical electrode.
申请人：LG SEMICON CO., LTD.
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