MITSUBISHI M54583P FP 说明书

M54583P/FP

8-UNIT 400mA DARLINGTON TRANSISTOR ARRAY

DESCRIPTION

M54583P and M54583FP are eight-circuit collector-current-synchronized Darlington transistor arrays. The circuits aremade of PNP and NPN transistors. Both the semiconductorintegrated circuits perform high-current driving with ex-tremely low input-current supply.

PIN CONFIGURATION (TOP VIEW)M54583PIN1→1IN2→2IN3→3INPUTIN4→4IN5→5IN6→618→O117→O216→O315→O414→O513→O612→O711→O810VCCOUTPUTFEATURES

●High breakdown voltage (BVCEO ≥ 50V)●High-current driving (Ic(max) = 400mA)●Active L-level input

●With input clamping diodes

IN7→7IN8→8GND9Outline 18P4GM54583FPNC120NCIN1→2IN2→3IN3→4IN4→5INPUTIN5→6IN6→7IN7→8IN8→9GND1019→O118→O217→O316→O415→O514→O613→O712→O811VCCOUTPUTAPPLICATION

Interfaces between microcomputers and high-voltage, high-current drive systems, drives of relays and printers, andMOS-bipolar logic IC interfaces

FUNCTION

The M54583 is produced by adding PNP transistors toM54523 inputs. Eight circuits having active L-level inputs areprovided.

Resistance of 7kΩ and diode are provided in series betweeneach input and PNP transistor base. The input diode is in-tended to prevent the flow of current from the input to theVCC. Without this diode, the current flow from “H” input to theVCC and the “L” input circuits is activated, in such case whereone of the inputs of the 8 circuits is “H” and the others are “L”to save power consumption. The diode is inserted to preventsuch misoperation.

This device is most suitable for a driver using NMOS IC out-put especially for the driver of current sink.

Collector current is 400mA maximum. Collector-emitter sup-ply voltage is 50V.

The 54583FP is enclosed in a molded small flat package,enabling space saving design.

Outline 20P2N-ANC : No connectionCIRCUIT DIAGRAM (EACH CIRCUIT)VCC7kINPUT7k2.7kOUTPUT7.2kGND3kThe eight circuits share the VCC and GND. The diode, indicated with the dotted line, is parasitic, and cannotbe used.Unit : ΩMay 2007

MITSUBISHI SEMICONDUCTOR

M54583P/FP

8-UNIT 400mA DARLINGTON TRANSISTOR ARRAY

ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –20 ~ +75°C)SymbolVCCVCEOVIICPdToprTstgParameterSupply voltageCollector-emitter voltageInput voltageCollector currentPower dissipationOperating temperatureStorage temperatureOutput, HCurrent per circuit output, LTa = 25°C, when mounted on boardConditionsRatings10–0.5 ~ +50–0.5 ~ VCC4001.79/1.1–20 ~ +75–55 ~ +125UnitVVVmAW°C°CRECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = –20 ~ +75°C)SymbolVCCSupply voltageVCC = 5V, Duty CycleP : no more than 10%Collector currentFP : no more than 5%Per channelVCC = 5V, Duty CycleP : no more than 34%FP : no more than 15%“H” input voltage“L” input voltageParametermin400VCC–0.70Limitstyp5————max8350mA200VCCVCC–3.6VVUnitVICVIHVILELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = –20 ~ +75°C)SymbolV (BR) CEOVCE (sat)IIICChFEParameterCollector-emitter breakdown voltageTest conditionsICEO = 100µA, VCC = 8VIC = 350mAIC = 200mALimitsmin50————2000typ+—1.20.98–3201.93500max—2.21.6–6003—UnitVVµAmA—Collector-emitter saturation voltageVI = VCC–3.6VInput currentSupply current (one circuit coming on)DC amplification factorVI = VCC–3.6VVCC = 5V, VI = VCC–3.6VVCE = 4V, VCC = 5V, IC = 350mA, Ta = 25°C+ : The typical values are those measured under ambient temperature (Ta) of 25°C. There is no guarantee that these values are obtained under anyconditions.SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25°C)SymboltontoffParameterTurn-on timeTurn-off timeCL = 15pF (note 1)Test conditionsLimitsmin——typ1303200max——UnitnsnsNOTE 1 TEST CIRCUITINPUTVCCMeasureddevicePG50ΩCLVOTIMING DIAGRAMINPUT50%50%RLOUTPUTOUTPUT50%50%tontoff(1) Pulse generator (PG) characteristics : PRR = 1kHz, tw = 10µs, tr = 6ns, tf = 6ns, ZO = 50Ω VI = 0.4 to 4V(2) Input-output conditions : RL = 30Ω, VO = 10V, VCC = 4V(3) Electrostatic capacity CL includes floating capacitance at connections and input capacitance at probesMay 2007

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MITSUBISHI SEMICONDUCTOR

M54583P/FP

8-UNIT 400mA DARLINGTON TRANSISTOR ARRAY

TYPICAL CHARACTERISTICSOutput Saturation VoltageCollector Current Characteristics5004003002001000Thermal Derating Factor Characteristics2.0M54583PPower dissipation Pd (W)1.5M54583FP1.0Collector current Ic (mA)0.5VI = 1.4VVCC= 5VTa = 75°CTa = 25°CTa = –20°C0025507510000.51.01.52.0Ambient temperature Ta (°C)Duty-Cycle-Collector Characteristics(M54583P)5004003002001000•The collector current values represent the current per circuit.•Repeated frequency ≥ 10Hz•The value in the circle represents the value of the simultaneously-operated circuit.•VCC = 5V•Ta = 25°COutput saturation voltage VCE (sat) (V)Duty-Cycle-Collector Characteristics(M54583P)500123456784003002001000•The collector current values represent the current per circuit.•Repeated frequency ≥ 10Hz•The value in the circle represents the value of the simultaneously-operated circuit.•VCC = 5V •Ta = 75°CCollector current Ic (mA)Collector current Ic (mA)12345768020406080100020406080100Duty cycle (%)Duty-Cycle-Collector Characteristics(M54583FP)50040030022001000•The collector current values represent the current per circuit.•Repeated frequency ≥ 10Hz•The value in the circle represents the value of the simultaneously-operated circuit.•VCC = 5V •Ta = 25°CDuty cycle (%)Duty-Cycle-Collector Characteristics(M54583FP)50014003002001000•The collector current values represent the current per circuit.•Repeated frequency ≥ 10Hz•Vcc =5.0V•The value in the circle represents the value of the simultaneously-operated circuit.•Ta = 75°CCollector current Ic (mA)Collector current Ic (mA)13456781002340204060800204060801005678Duty cycle (%)Duty cycle (%)May 2007

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MITSUBISHI SEMICONDUCTOR

M54583P/FP

8-UNIT 400mA DARLINGTON TRANSISTOR ARRAY

Input Characteristics–1.0–0.8Input current II (mA)VCC = 5VDC Amplification FactorCollector Current Characteristics104DC amplification factor hFE753–0.6–0.4–0.20Ta = 75°CTa = 25°CTa = –20°C103753VCC = 5VVCE = 4VTa = 75°CTa = 25°CTa = –20°C012345102110357102357103Supply voltage-Input voltage VCC–VI (V)Collector current Ic (mA)Supply Current Characteristics5Grounded Emitter Transfer Characteristics400VCC = 4VVCE = 4VVI = 0VCollector current Ic (mA)300Supply current Icc (mA)Ta = 75°CTa = 25°CTa = –20°C43210Ta = 75°CTa = 25°CTa = –20°C2001000012340246810Supply voltage-Input voltage VCC–VI (V)Supply voltage VCC (V) May 2007

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