ZXTD2M832TA;中文规格书,Datasheet资料

ZXTD2M832MPPS™ Miniature Package Power SolutionsDUAL 20VPNPLOW SATURATION SWITCHING TRANSISTORSUMMARYVCEO= -20V;RSAT= 64m;IC= -3.5ADESCRIPTIONPackagedintheinnovative3mmx2mmMLP(MicroLeadedPackage)outline,thesenew4thgenerationlowsaturationdualtransistorsofferextremelylowonstatelossesmakingthemidealforuseinDC-DCcircuitsand various driving and power management functions.Additionally users gain several otherkey benefits:Performance capability equivalent to much larger packagesImproved circuit efficiency & power levelsPCB area and device placement savingsLower package height (nom 0.9mm)Reduced component count3mm x 2mm (Dual die)MLPC2C1FEATURES•Low Equivalent On Resistance•Extremely Low Saturation Voltage(-220mV @ -1A)•hFEcharacterised up to -6A•IC= -3.5A Continuous Collector Current•3mm x 2mmMLPB2B1E2E1APPLICATIONS•DC - DC Converters (FET Drivers)•Charging circuits•Power switches•Motor control•LED Backlighting circuitsPINOUTORDERING INFORMATIONDEVICEZXTD2M832TAZXTD2M832TCREEL7؅؅13؅؅TAPEWIDTH8mm8mmQUANTITYPERREEL3000100003mm x 2mmMLPunderside viewDEVICE MARKINGD22ISSUE 2 - JANUARY 20071http://oneic.com/ZXTD2M832

ABSOLUTE MAXIMUM RATINGS.PARAMETERCollector-BaseVoltageCollector-EmitterVoltageEmitter-BaseVoltagePeakPulseCurrentContinuousCollectorCurrent(a)(f)BaseCurrentPowerDissipationatTA=25°C(a)(f)LinearDeratingFactorPowerDissipationatTA=25°C(b)(f)LinearDeratingFactorPowerDissipationatTA=25°C(c)(f)LinearDeratingFactorPowerDissipationatTA=25°C(d)(f)LinearDeratingFactorPowerDissipationatTA=25°C(d)(g)LinearDeratingFactorPowerDissipationatTA=25°C(e)(g)LinearDeratingFactorOperatingandStorageTemperatureRangeSYMBOLVCBOVCEOVEBOICMICIBPDPDPDPDPDPDTj:TstgLIMIT-25-20-7.5-6-3.5-10001.5122.4519.6181.1391.713.6324-55 to +150UNITVVVAAmAWmW/°CWmW/°CWmW/°CWmW/°CWmW/°CWmW/°C°CTHERMAL RESISTANCEPARAMETERJunctiontoAmbient(a)(f)JunctiontoAmbient(b)(f)JunctiontoAmbient(c)(f)JunctiontoAmbient(d)(f)JunctiontoAmbient(d)(g)JunctiontoAmbient(e)(g)Notes(a) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditionswith all exposed pads attached. Thecopper area is split down the centre line into two separate areas with one half connected to each half of the dual device.(b) Measured at t<5 secs for a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditionswith all exposedpads attached.The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.(c) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditionswith minimal lead connections only.(d) For a dual device surface mounted on 10 sq cm single sided 1oz copper on FR4 PCB, in still air conditionswith all exposed pads attachedattached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.(e) For a dual device surface mounted on 85 sq cm single sided 2oz copper on FR4 PCB, in still air conditionswith all exposed pads attachedattached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.(f) For a dual device with one active die.(g) For dual device with 2 active die running at equal power.(h) Repetitive rating - pulse width limited by max junction temperature. Refer to Transient Thermal Impedance graph.(i) The minimum copper dimensions required for mounting are no smaller than the exposed metal pads on the base of the device as shown in thepackage dimensions data. The thermal resistance for a dual device mounted on 1.5mm thick FR4 board using minimum copper 1 oz weight, 1mmwide tracks and one half of the device active isRth= 250°C/W giving a power rating ofPtot= 500mW.SYMBOLRθJARθJARθJARθJARθJARθJAVALUE83.35112511173.541.7UNIT°C/W°C/W°C/W°C/W°C/W°C/WISSUE 2 - JANUARY 20072http://oneic.com/ZXTD2M832

TYPICAL CHARACTERISTICS10MaxPowerDissipation(W)ICCollectorCurrent(A)VCE(SAT)Limited3.53.02.52.01.51.00.50.001ozCuNote(d)(f)2ozCuNote(e)(g)Tamb=25°C1DC1s100ms10msNote(a)(f)SinglePulse,Tamb=25°C1ms100us2ozCuNote(a)(f)1ozCuNote(d)(g)0.10.010.1110255075100125150VCECollector-EmitterVoltage(V)Temperature(°C)SafeOperatingAreaDeratingCurve22520017515012510075502500.1ThermalResistance(°C/W)ThermalResistance(°C/W)8060Note(a)(f)1ozcopperNote(f)1ozcopperNote(g)D=0.54020D=0.2SinglePulseD=0.05D=0.12ozcopperNote(f)2ozcopperNote(g)0100µ1m10m100m1101001k110100PulseWidth(s)BoardCuArea(sqcm)TransientThermalImpedance3.53.0Tjmax=150°C2.52.01.51.00.50.00.111ozcopperNote(f)1ozcopperNote(g)Tamb=25°C2ozcopperNote(g)ThermalResistancevBoardAreaPDDissipation(W)Continuous2ozcopperNote(f)10100BoardCuArea(sqcm)PowerDissipationvBoardAreaISSUE 2 - JANUARY 20073http://oneic.com/ZXTD2M832

ELECTRICAL CHARACTERISTICS (atTamb= 25°C unless otherwise stated).PARAMETERCollector-BaseBreakdownVoltageCollector-EmitterBreakdownVoltageEmitter-BaseBreakdownVoltageCollectorCut-OffCurrentEmitterCut-OffCurrentCollectorEmitterCut-OffCurrentCollector-EmitterSaturationVoltageSYMBOLV(BR)CBOV(BR)CEOV(BR)EBOICBOIEBOICESVCE(sat)-19-170-190-240-225Base-EmitterSaturationVoltageBase-EmitterTurn-OnVoltageStaticForwardCurrentTransferRatioVBE(sat)VBE(on)hFE30030015015TransitionFrequencyOutputCapacitanceTurn-OnTimeTurn-OffTimefTCobot(on)t(off)150-1.01-0.8747545023030180214067030MHzpFnsnsMIN.-25-20-7.5TYP.-35-258.5-25-25-25-30-220-250-350-300-0.95MAX.UNITVVVnAnAnAmVmVmVmVmVVCONDITIONS.IC=-100␮AIC=-10mA*IE=-100␮AVCB=-20VVEB=-6VVCES=-16VIC=-0.1A,IB=-10mA*IC=-1A,IB=-20mA*IC=-1.5A,IB=-50mA*IC=-2.5A,IB=-150mA*IC=-3.5A,IB=-350mA*IC=-3.5A,IB=350mA*IC=-3.5A,VCE=-2V*IC=-10mA,VCE=-2V*IC=-0.1A,VCE=-2V*IC=-2A,VCE=-2V*IC=-6A,VCE=-2V*IC=-50mA,VCE=-10Vf=100MHzVCB=10V,f=1MHzVCC=-10V,IC=1AIB1=IB2=20mA-1.075V*Measured under pulsed conditions. Pulse width=300µs. Duty cycle≤2%ISSUE 2 - JANUARY 20074http://oneic.com/ZXTD2M832TYPICAL CHARACTERISTICS1Tamb=25°C0.250.20IC/IB=50100°C25°C-55°CVCE(SAT)(V)IC/IB=100IC/IB=50IC/IB=10VCE(SAT)(V)10m100m110100m0.150.100.050.001m10m10m1mICCollectorCurrent(A)VCE(SAT)vICICCollectorCurrent(A)100m110VCE(SAT)vIC1.4NormalisedGain0.80.60.40.20.01m25°C36027018090010VBE(SAT)(V)1.0450TypicalGain(hFE)1.2100°CVCE=2V6305401.00.8IC/IB=50-55°C0.60.41m25°C100°C-55°CICCollectorCurrent(A)10m100m1hFEvICICCollectorCurrent(A)10m100m110VBE(SAT)vIC1.00.8VCE=2VVBE(ON)(V)-55°C0.60.40.21m25°C100°CICCollectorCurrent(A)10m100m110VBE(ON)vICISSUE 2 - JANUARY 20075http://oneic.com/ZXTD2M832

MLP832 PACKAGE OUTLINE(3mm x 2mm Micro Leaded Package)CONTROLLING DIMENSIONS IN MILLIMETRESAPPROX. CONVERTED DIMENSIONS IN INCHESMLP832 PACKAGE DIMENSIONSMILLIMETRESDIMAA1A2A3bb1DD2D3MIN.0.800.000.650.150.240.170.821.01MAX.1.000.050.750.250.340.301.021.21INCHESMIN.0.0310.000.02550.0060.0090.00660.0320.0397MAX.0.0390.0020.02950.00980.0130.01180.0400.0476DIMeEE2E4LL2r⍜0ЊMILLIMETRESMIN.MAX.0.65REF2.00BSC0.430.160.200.630.360.450.1250.075BSC12ЊINCHESMIN.MAX.0.0256BSC0.0787BSC0.0170.0060.00780.000Њ0.02490.0140.01570.00512Њ3.00BSC0.118BSC0.0029BSC©ZetexSemiconductors plc 2007EuropeZetexGmbHBalan-straße59D-81541 MünchenGermanyTelefon: (49) 89 45 49 49 0Fax: (49) 89 45 49 49 49europe.sales@zetex.comAmericasZetexInc700 Veterans Memorial HwyHauppauge, NY11788USATelephone: (631) 360 2222Fax: (631) 360 8222usa.sales@zetex.comAsia PacificZetex(Asia) Ltd3701-04Metroplaza, Tower 1HingFongRoadKwaiFongHong KongTelephone: (852) 26100 611Fax: (852) 24250 494asia.sales@zetex.comCorporate HeadquartersZetex Semiconductors plcZetex Technology ParkChaddertonOldham, OL9 9LLUnited KingdomTel: (44) 161 622 4444Fax: (44) 161 622 4446hq@zetex.comTheseofficesaresupportedbyagentsanddistributorsinmajorcountriesworld-wide.Thispublicationisissuedtoprovideoutlineinformationonlywhich(unlessagreedbytheCompanyinwriting)maynotbeused,appliedorreproducedforanypurposeorformpartofanyorderorcontractorberegardedasarepresentationrelatingtotheproductsorservicesconcerned.TheCompanyreservestherighttoalterwithoutnoticethespecification,design,priceorconditionsofsupplyofanyproductorservice.Forthelatestproductinformation,logontowww.zetex.comISSUE 2 - JANUARY 20076http://oneic.com/

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ZXTD2M832TA