Vapor phase growth of III-V materials

专利名称：Vapor phase growth of III-V materials发明人：Paul A. Longeway申请号：US06/813409申请日：19851226公开号：US04699675A公开日：19871013

摘要：The fabrication of a layer of a III-V semiconductor material by vapor phaseepitaxy is improved by precoating the walls of the deposition chamber in a suitableapparatus with the desired material. The coating of the deposition chamber is continueduntil the material being deposited is depth-uniform and of the same composition as thedesired layer. Material then deposited on the substrate is free of depth compositionalgradient. In a further improvement, the walls of the deposition chamber of the apparatusare roughened, thus providing nucleation sites for the growing coating and substantiallyreducing the time required to precoat the walls of the deposition chamber.

申请人：RCA CORPORATION

代理人：Allen L. Limberg,Harley R. Ball

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