专利名称：Methods of making integrated circuits发明人：Chung-Ying Yang,Hsien-Wei Chen申请号：US14322122申请日：20140702公开号：US09064939B2公开日：20150623
专利附图：
摘要：A method of making an integrated circuit including forming a seal ring structurearound a circuit where the seal ring structure has a first portion and a tilted portion. Thefirst portion of the seal ring structure is substantially parallel with an edge of the circuit.The tilted portion of the seal ring structure forms an obtuse angle with the first portion.
The method further includes forming a first pad which is electrically coupled with the sealring structure. The method further includes disposing a leakage current test structure inan area enclosed by the seal ring where at least one portion of the leakage current teststructure is substantially parallel with the tilted portion of the seal ring structure. Themethod further includes forming a second pad which is electrically coupled with theleakage current test structure.
申请人：TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
地址：Hsinchu TW
国籍：TW
代理机构：Lowe Hauptman & Ham, LLP
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