X-ray image sensor and method for fabricating the

专利名称：X-ray image sensor and method for

fabricating the same

发明人：Kyo-Seop Choo,June-Ho Park申请号：US09750244申请日：20001229

公开号：US20010013577A1公开日：20010816

摘要：An X-ray image sensor fabricated using only eight-masks includes: a substrate; athin film transistor (TFT) formed in the switching region of the substrate and having agate electrode, a first insulation layer, a pure amorphous silicon layer, a doped

amorphous silicon layer and source and drain electrodes; an island-shaped first insulationlayer and a island-shaped semiconductor layer formed over the substrate in the pixelregion; a ground line formed on the island-shaped semiconductor layer; a secondinsulation layer formed on the TFT, on the substrate and on the ground line, the secondinsulation layer having a first drain contact hole, which expose the portion of the drainelectrode, and a ground line contact hole, which expose the portion of the ground line; aauxiliary drain electrode formed on the second insulation layer and contacting the drainelectrode through the first drain contact hole; a capacitor electrode formed on thesecond insulation layer and contacting the ground line through the ground line contacthole; a third insulation layer formed on the second insulation layer, on the auxiliary drainelectrode and on the capacitor electrode, the third insulation layer having the seconddrain contact hole which expose the portion of the auxiliary drain electrode; and a pixelelectrode formed on the third insulation layer and contacting the auxiliary drain

electrode through the second drain contact hole.

申请人：CHOO KYO-SEOP,PARK JUNE-HO

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