Sacrificial annealing layer for a semiconductor de

专利名称：Sacrificial annealing layer for a

semiconductor device and a method offabrication

发明人：Mark Y. Liu,Justin K. Brask申请号：US10716321申请日：20031117

公开号：US20040102057A1公开日：20040527

专利附图：

摘要：Numerous embodiments of a method and apparatus for a sacrificial annealinglayer are disclosed. In one embodiment, a method of forming a sacrificial annealing layer

for a semiconductor device comprises forming one or more sacrificial layers on at least aportion of the top surface of a semiconductor device, annealing at least a portion of thedevice, and removing a substantial portion of the one or more sacrificial layers, where theremoving results in no substantial physical alterations to the device.

申请人：LIU MARK Y.,BRASK JUSTIN K.

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