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SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE

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专利内容由知识产权出版社提供

专利名称：SEMICONDUCTOR STRUCTURE AND

METHOD FOR FORMING THE SAME

发明人：Shin-Hung LI申请号：US15949368申请日：20180410

公开号：US20190279994A1公开日：20190912

专利附图：

摘要：A semiconductor structure and a method for forming the same are provided.The semiconductor structure includes a substrate, a resistive random access memory cell,and a semiconductor element. The resistive random access memory cell is on the

substrate. The resistive random access memory cell includes a first electrode having a Ushape. The semiconductor element is adjoined with an outer sidewall of the firstelectrode.

申请人：UNITED MICROELECTRONICS CORP.

地址：Hsinchu TW

国籍：TW

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