专利名称：GATE-DRIVING APPARATUS
发明人：Dae Woo LEE,Jin Myeong YANG,In Yong
YEO,Jin Young YANG,Youn Sik LEE,ByeongSeob SONG,Woo Young LEE
申请号：US15357887申请日：20161121
公开号：US20180054195A1公开日：20180222
专利附图：
摘要：Disclosed herein is a gate-driving apparatus configured for stably providing avoltage having a negative value to a gate of a switch, including a SiC(silicon carbide)-based
FET (Field Effect Transistor), which requires a negative voltage having a negative value toimplement a stable OFF state. The gate-driving apparatus includes a negative-voltageapplication circuit including a Zener diode and a capacitor connected in parallel to theZener diode, wherein the Zener diode may have a cathode connected to a secondary coilof a pulse transformer and an anode connected to the gate of the switch.
申请人：Hyundai Motor Company
地址：Seoul KR
国籍：KR
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