专利名称：FUSE FOR IN USE OF A SEMICONDUCTOR
DEVICE AND METHOD FOR FORMING THESAME
发明人：Byung Wook BAE申请号：US121032申请日：20091217
公开号：US20110001211A1公开日：20110106
专利附图：
摘要：Provided is a fuse of a semiconductor device that includes a Y type fuse and aninsulation layer configured to expose the Y type fuse such that an exposed portion of the
Y type fuse has a substantially ‘V’ shape. According to the present invention, metalcrack is prevented from occurring in a Y type fuse under a high temperature and highhumidity condition of a reliability test so that the reliability and competitiveness ofsemiconductor devices can be improved.
申请人：Byung Wook BAE
地址：Icheon-si KR
国籍：KR
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