Efficient methodology for the accurate generation

专利名称：Efficient methodology for the accurate

generation of customized compact modelparameters from electrical test data

发明人：Sim Y. Loo,Steven G. Lovejoy,Myung-Hee

Na,Edward J. Nowak,Scott K. Springer

申请号：US11626915申请日：20070125公开号：US08032349B2公开日：20111004

专利附图：

摘要：Disclosed herein are embodiments of an automated, fast and efficient method

of generating a customized compact model that represents a semiconductor device atthe chip, wafer or multi-wafer level in a specific manufacturing environment. Specifically,measurement data is collected from a specific manufacturing environment and sorted bychannel lengths. Then, an optimizer is used to generate customized modeling

parameters based on the measurement data. The optimization processes is a multi-stepprocess. First, a first set of modeling parameters is generated based on measurementdata associated with a long channel length. Second, a second set of modeling parametersis generated based on the first set and on measurement data associated with a shortchannel length. Finally, the customized modeling parameters are generated based onboth the first set and the second set. The customized modeling parameters are used togenerate a customized compact device model representative of the specificmanufacturing environment.

申请人：Sim Y. Loo,Steven G. Lovejoy,Myung-Hee Na,Edward J. Nowak,Scott K. Springer

地址：Rochester MN US,Hopewell Junction NY US,Lagrangeville NY US,Essex JunctionVT US,Burlington VT US

国籍：US,US,US,US,US

代理机构：Gibb I.P. Law Firm, LLC

代理人：Richard M. Kotulak, Esq.

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