ZMY3V9 to ZMY100
Vishay Semiconductors
Zener Diodes
Features
•Silicon Planar Power Zener Diodes
•For use in stablilizing and clipping circuits
e2with high power rating
•The Zener voltages are graded according
to the international E 24 standard. Smaller voltagetolerances are available upon request
•These diodes are also available in the DO41 casewith the type designation ZPY3V9 to ZPY100 •Lead (Pb)-free component
•Component in accordance to RoHS 2002/95/ECand WEEE 2002/96/EC
18315
Mechanical Data
Case: MELF Glass caseWeight: approx. 135 mgCathode Band Color: blackPackaging Codes/Options:
GS18/ 5 k per 13\" reel (12 mm tape), 10 k/boxGS08/ 1.5 k per 7\" reel (12 mm tape), 12 k/box
Absolute Maximum Ratings
Tamb = 25°C, unless otherwise specified
Parameter
Zener current (see Table \"Characteristics\")Power dissipation
1)
Test conditionSymbolPtot
Value1.01)
UnitW
Valid provided that electrodes are kept at ambient temperature.
Thermal Characteristics
Tamb = 25°C, unless otherwise specified
Parameter
Thermal resistance junction to ambient airThermal resistance junction to caseJunction temperatureStorage temperature
1)
Test conditionSymbolRthJARthJCTjTstg
Value1701)60175- 55 to + 175
UnitK/WK/W°C°C
Valid provided that electrodes are kept at ambient temperature.
Document Number 85788Rev. 1.7, 07-Aug-06
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ZMY3V9 to ZMY100
Vishay SemiconductorsElectrical Characteristics
Partnumber
Zener Voltage (2)
Dynamic Resistance
Temperature Coefficient of Zener VoltageαVZ at IZT10-4/°C
typ
777522222447799101112131415202060608080100100130130160160250250
444211111223344556789101125303540455060657080120130
min- 7- 7- 7- 6- 3- 100335555577777777788888888899
max23455677889101010101111111112121212121213131313131313131313
10010010010010010010010010050505050505025252525252525251010101010101010101055
---0.71.5235677.58.59101112141517182022.525272932353842475156616875
2031821651501351281101008982746660554944403634292725222018171514131110987.57
Test CurrentIZTmA
Reverse Voltage
Admissible Zener
Current1)
VR at IR = 0.5 µA
V
IZ at
Tamb = 25 °C
mA
VZ at IZT
V
min
ZMY3V9ZMY4V3ZMY4V7ZMY5V1ZMY5V6ZMY6V2ZMY6V8ZMY7V5ZMY8V2ZMY9V1ZMY10ZMY11ZMY12ZMY13ZMY15ZMY16ZMY18ZMY20ZMY22ZMY24ZMY27ZMY30ZMY33ZMY36ZMY39ZMY43ZMY47ZMY51ZMY56ZMY62ZMY68ZMY75ZMY82ZMY91ZMY100
2)
rzj at IZT, f = 1 kHz
Ω
max4.14.655.466.67.27.98.79.610.611.612.714.115.817.119.121.223.325.628.932353841465054606672798896106
3.744.44.85.25.86.477.78.59.410.411.412.413.815.316.818.820.822.825.12831343740444852586470778594
1) Valid provided that electrodes are kept at ambient temperature
Tested with pulses tp = 5 ms
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Document Number 85788
Rev. 1.7, 07-Aug-06
元器件交易网www.cecb2b.com
ZMY3V9 to ZMY100
Vishay Semiconductors
Typical Characteristics
Tamb = 25°C, unless otherwise specified
Ω1035432
ZMY...W1.00.80.60.40.2ZMY...rzj102ZMY5.15432
PtotZMY4.3ZMY18ZMY12105432
ZMY6.2ZMY10ZMY7.52
345
7
1118312
2
00199693457
10100 mA100Tamb200 °CIZ
Figure1. Dynamic Resistance vs. Zener CurrentFigure4. Admissible Power Dissipation vs. Ambient Temperature
Ω100
75432
ZMY...°C/W103
5432
ZMY...rzjrthAZMY43ZMY36ZMY30ZMY24ZMY22102
5432
0.50.20.10.050.020.01-5
10
75432
10
5432
ZMY18tP1118313
2
345
1
10
2
345
V = 0-4
tPv = ___TTPI100mA
10
18286
1010-310-210-1tP
110 s
IZ
Figure2. Dynamic Resistance vs. Zener CurrentFigure5. Pulse Thermal Resistance vs. Pulse Duration
Ω103
75432
ZMY...rzj102
75432
ZMY100ZMY82ZMY68ZMY56ZMY43100.118314
2345
12345
10 mAIZ
Figure3. Dynamic Resistance vs. Zener Current
Document Number 85788Rev. 1.7, 07-Aug-06
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ZMY3V9 to ZMY100
Vishay Semiconductors
mA240200IZ
160120100 mA80
50 mATest Current lZZMY3.9ZMY4.7ZMY5.6ZMY6.8ZMY8.2ZMY10ZMY...Tj = 25 °CmA20
ZMY56ZMY...Tj = 25 °CIZTest Current lZ10 mAZMY68ZMY82ZMY1005 mA10
ZMY124000
183090
1
2
3
4
5
6
7
8
9VZ
101112131415 V
18311050100
VZ
150200 V
Figure6. Breakdown Characteristics
Figure8. Breakdown Characteristics
mA6050IZ
403020
10 mATest Current lZ25 mAZMY15ZMY18ZMY22ZMY27ZMY33ZMY...Tj = 25 °CZMY39ZMY471000
18310
51015202530VZ
35404550 V
Figure7. Breakdown Characteristics
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Document Number 85788
Rev. 1.7, 07-Aug-06
元器件交易网www.cecb2b.com
ZMY3V9 to ZMY100
Vishay Semiconductors
Package Dimensions of MELF Glass in mm (Inches): DO41
Cathode Identification18317Document Number 85788Rev. 1.7, 07-Aug-06
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ZMY3V9 to ZMY100
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1.Meet all present and future national and international statutory requirements.
VISHAY2.Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well astheir impact on the environment.It is particular concern to control or eliminate releases of those substances into the atmosphere which areknown as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSsand forbid their use within the next ten years. Various national and international initiatives are pressing for anearlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the useof ODSs listed in the following documents.
1.Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendmentsrespectively2.Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the EnvironmentalProtection Agency (EPA) in the USA3.Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depletingsubstances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
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Document Number 85788
Rev. 1.7, 07-Aug-06
元器件交易网www.cecb2b.com
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained hereinor in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of anyinformation provided herein to the maximum extent permitted by law. The product specifications do not expand orotherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressedtherein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by thisdocument or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unlessotherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in suchapplications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resultingfrom such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regardingproducts designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000Revision: 18-Jul-08
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