Robust replacement gate integration

专利名称：Robust replacement gate integration发明人：Hemanth Jagannathan,Sanjay Mehta申请号：US13670748申请日：20121107公开号：US08835237B2公开日：20140916

专利附图：

摘要：A method including forming a dummy gate on a substrate, wherein the dummygate includes an oxide, forming a pair of dielectric spacers on opposite sides of thedummy gate, and forming an inter-gate region above the substrate and in contact with atleast one of the pair of dielectric spacers, the inter-gate region comprising a protective

layer on top of a first oxide layer, wherein the protective layer comprises a materialresistant to etching techniques designed to remove oxide. The method may furtherinclude removing the dummy gate to leave an opening, and forming a gate within theopening.

申请人：International Business Machines Corporation

地址：Armonk NY US

国籍：US

代理人：L. Jeffrey Kelly,Catherine Ivers

更多信息请下载全文后查看