1N4150
Vishay Semiconductors
Small Signal Fast Switching Diodes
Features
• • • • •
Silicon Epitaxial Planar DiodeLow forward voltage drop
e2High forward current capability
Lead (Pb)-free component
Component in accordance to RoHS 2002/95/ECand WEEE 2002/96/EC
94 9367
Applications
•High speed switch and general purpose use in computer and industrial applications
Mechanical Data
Case: DO35 Glass caseWeight: approx. 125 mgCathode Band Color: blackPackaging Codes/Options:
TR/10 k per 13\" reel (52 mm tape), 50 k/box
TAP/10 k per Ammopack (52 mm tape), 50 k/box
Parts Table
Part
1N4150
Ordering code
1N4150-TR or 1N4150-TAP
Type Marking1N4150
Remarks
Tape and Reel/Ammopack
Absolute Maximum Ratings
Tamb = 25°C, unless otherwise specified
Parameter
Repetitive peak reverse voltageReverse voltage
Peak forward surge currentAverage peak forward currentForward continuous currentAverage forward currentPower dissipation
VR = 0
l = 4 mm, TL = 45°Cl = 4 mm, TL ≤ 25°Ctp = 1 µs
Test condition
SymbolVRRMVRIFSMIFRMIFIFAVPtotPtot
Value50504600300150440500
UnitVVAmAmAmAmWmW
Thermal Characteristics
Tamb = 25°C, unless otherwise specified
Parameter
Junction temperatureStorage temperature range
Test condition
SymbolRthJATjTstg
Value350175- 65 to + 175
UnitK/W°C°C
Thermal resistance junction to ambient airl = 4 mm, TL = constant
Document Number 85522Rev. 1.7, 16-Feb-07
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1N4150
Vishay SemiconductorsElectrical Characteristics
Tamb = 25°C, unless otherwise specified
Parameter
Forward voltage
Test condition
IF = 1 mAIF = 10 mAIF = 50 mAIF = 100 mAIF = 200 mA
Reverse currentDiode capacitanceReverse recovery time
VR = 50 V
VR = 50 V, Tj = 150°C
VR = 0, f = 1 MHz, VHF = 50 mVIF = IR = (10 to 100) mA, iR = 0.1 x IR, RL = 100 Ω
SymbolVFVFVFVFVFIRIRCDtrr
Min540660760820870
Typ.
Max62074086092010001001002.54
UnitmVmVmVmVmVnAµApFns
Typical Characteristics
Tamb = 25°C, unless otherwise specified
100IR-Reverse Current (µA)1000
Scattering LimitIF- Forward Current (mA)10100
Scattering Limit10
1 0.1VR= 50 V040801201602001
Tj= 25 °C0
0.4
0.8
1.2
1.6
2.0
0.0194 9100
0.1
94 9162
Tj- Junction Temperature (°C)VF- Forward Voltage (V)
Figure1. Reverse Current vs. Junction TemperatureFigure2. Forward Current vs. Forward Voltage
Package Dimensions in mm (inches): DO35
Cathode Identification 0.55 max. (0.022)1.7 (0.067)Rev. 6 - Date: 29.January 2007Document no.: 6.560-5004.02-494 9366www.vishay.com2
Document Number 85522
Rev. 1.7, 16-Feb-07
1.5 (0.059)26 min. (1.024)3.9 max. (0.154)26 min. (1.024)元器件交易网www.cecb2b.com
1N4150
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1.Meet all present and future national and international statutory requirements.
2.Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well astheir impact on the environment.It is particular concern to control or eliminate releases of those substances into the atmosphere which areknown as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSsand forbid their use within the next ten years. Various national and international initiatives are pressing for anearlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the useof ODSs listed in the following documents.
1.Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendmentsrespectively2.Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the EnvironmentalProtection Agency (EPA) in the USA3.Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depletingsubstances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number 85522Rev. 1.7, 16-Feb-07
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Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained hereinor in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of anyinformation provided herein to the maximum extent permitted by law. The product specifications do not expand orotherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressedtherein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by thisdocument or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unlessotherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in suchapplications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resultingfrom such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regardingproducts designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000Revision: 18-Jul-08
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