High-voltage transistor with high current load cap

专利名称：High-voltage transistor with high current

load capacity and method for its production

发明人：Georg Roehrer申请号：US15056993申请日：20160229公开号：US09876095B2公开日：20180123

专利附图：

摘要：An isolation area () is provided over a drift region () with a spacing (d) to acontact area () provided for a drain connection (D). The isolation area is used as animplantation mask, in order to produce a dopant profile of the drift region in which the

dopant concentration increases toward the drain. The implantation of the dopant can beperformed instead before the production of the isolation area, and the later productionof the isolation area () changes the dopant profile also in a way that the dopantconcentration increases toward the drain.

申请人：ams AG

地址：Unterpremstaetten AT

国籍：AT

代理机构：McDermott Will & Emery, LLP

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