2N5638, 2N5639
2N5638 is a Preferred Device
JFET Chopper Transistors
N–Channel – Depletion
N–Channel Junction Field Effect Transistors, depletion mode (TypeA) designed for chopper and high–speed switching applications.
•Low Drain–Source “ON” Resistance:••
RDS(on) = 30Ω for 2N5638RDS(on) = 60Ω for 2N5639
Low Reverse Transfer Capacitance
Crss = 4.0 pF (Max) @ f = 1.0 MHz
Fast Switching Characteristics
tr = 5.0 ns (Max) (2N5638)
http://onsemi.com
1 DRAIN3GATE
2 SOURCE
MAXIMUM RATINGSRatingDrain–Source VoltageDrain–Gate VoltageReverse Gate–Source VoltageForward Gate CurrentTotal Device Dissipation@ TA = 25°CDerate above 25°CStorage Temperature RangeOperating Junction Temp RangeSymbolVDSVDGVGSRIGFPDValue303030103102.82–65 to +150–65 to +135UnitVdcVdcVdcmAdcmWmW/°C°C°CYWW
= Year
= Work Week
2N5638YWW
2N5639YWW
12TO–92CASE 29STYLE 5
3MARKING DIAGRAMS
TstgTJVDD = 10 VdcVRL+DD*(RDS(on))50)ID50PULSEGENERATORINPUT(SCOPE A)10%90%td(on)tftd(off)OUTPUT(SCOPE B)90%10%50SCOPETEKTRONIX 567AOR EQUIVALENTVGS(on)VGS(off)tr1.0 k5050 OhmsTO50 OHMSCOPE A0.1 mFTO50 OHM0.001 mFSCOPE B+–ORDERING INFORMATION
Device2N5638RLRA2N56392N5369RLRA
PackageTO–92TO–92TO–92
Shipping2000/Tape & Reel
5000/Box2000/Tape & Reel
RLPreferred devices are recommended choices for future useand best overall value.
Figure 1. Switching Times Test Circuit
© Semiconductor Components Industries, LLC, 20011
September, 2001 – Rev. 3
Publication Order Number:
2N5638/D
元器件交易网www.cecb2b.com
2N5638, 2N5639
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)CharacteristicSymbolMinMaxUnitOFF CHARACTERISTICSGate–Source Breakdown VoltageGate Reverse Current(IG = –1.0 µAdc, VDS = 0)(VGS = –15 Vdc, VDS = 0)(VGS = –15 Vdc, VDS = 0, TA = 100°C)V(BR)GSSIGSSID(off)35––1.01.01.01.0–1.01.0VdcnAdcµAdcµAdcDrain–Cutoff Current(VDS = 15 Vdc, VGS = –12 Vdc) 2N5638(VDS = 15 Vdc, VGS = –12 Vdc, TA = 100°C) 2N5638(VDS = 15 Vdc, VGS = –8.0 Vdc) 2N5639(VDS = 15 Vdc, VGS = –8.0 Vdc, TA = 100°C) 2N5639ON CHARACTERISTICSZero–Gate–Voltage Drain Current (Note 1.)(VDS = 20 Vdc, VGS = 0)Drain–Source “ON” Voltage(ID = 12 mAdc, VGS = 0)(ID = 6.0 mAdc, VGS = 0)Static Drain–Source “ON” Resistance(ID = 1.0 mAdc, VGS = 0)2N56382N56392N56382N56392N56382N5639IDSSVDS(on)5025––––––0.50.5Ω3060mAdcVdcRDS(on)SMALL–SIGNAL CHARACTERISTICSStatic Drain–Source “ON” Resistance(VGS = 0, ID = 0, f = 1.0 kHz)Input CapacitanceReverse Transfer Capacitance2N56382N5639RDS(on)Ω––––3060104.0pFpF(VDS = 0, VGS = –12 Vdc, f = 1.0 MHz)(VDS = 0, VGS = –12 Vdc, f = 1.0 MHz)ID(on) = 12 mAdc, 2N5638ID(on) = 6.0 mAdc, 2N5639ID(on) = 12 mAdc, 2N5638ID(on) = 6.0 mAdc, 2N5639ID(on) = 12 mAdc, 2N5638ID(on) = 6.0 mAdc, 2N5639ID(on) = 12 mAdc, 2N5638ID(on) = 6.0 mAdc, 2N5639CissCrsstd(on)trtd(off)tfSWITCHING CHARACTERISTICS (VDD = 10 Vdc, VGS(on) = 0, VGS(off) = –10 Vdc, RG’ = 50 Ω. See Figure 1 on page 1)Turn–On Delay TimeRise TimeTurn–Off Delay TimeFall Time1.Pulse Width ≤ 300 µs, Duty Cycle ≤ 3.0%.
––––––––4.06.05.08.05.0101020nsnsnsnshttp://onsemi.com
2
元器件交易网www.cecb2b.com
2N5638, 2N5639
PACKAGE DIMENSIONS
TO–92 (TO–226)CASE 29–11ISSUE AL
ARPLSEATINGPLANE
BNOTES:
1.DIMENSIONING AND TOLERANCING PER ANSIY14.5M, 1982.
2.CONTROLLING DIMENSION: INCH.
3.CONTOUR OF PACKAGE BEYOND DIMENSION RIS UNCONTROLLED.
4.LEAD DIMENSION IS UNCONTROLLED IN P ANDBEYOND DIMENSION K MINIMUM.
INCHESMINMAX0.1750.2050.1700.2100.1250.1650.0160.0210.0450.0550.0950.1050.0150.0200.500---0.250---0.0800.105---0.1000.115---0.135---MILLIMETERSMINMAX4.455.204.325.333.184.190.4070.5331.151.392.422.660.390.5012.70---6.35---2.042.66---2.542.93---3.43---KXXHV1DGJCNNSECTION X–XDIMABCDGHJKLNPRVhttp://onsemi.com
3
元器件交易网www.cecb2b.com
2N5638, 2N5639
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PUBLICATION ORDERING INFORMATION
JAPAN: ON Semiconductor, Japan Customer Focus Center
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