Spin injection magnetization reversal element

专利名称：Spin injection magnetization reversal

element

发明人：Akira Saito申请号：US11475835申请日：20060627

公开号：US20070001251A1公开日：20070104

专利附图：

摘要：A spin injection magnetization reversal element includes a ferromagnetic fixedlayer, an isolation layer and a ferromagnetic free layer. The area of contact between theferromagnetic fixed layer and the isolation layer is larger than an area of contact

between the ferromagnetic free layer and the isolation layer. The ferromagnetic fixedlayer may be divided into ferromagnetic first fixed layer and ferromagnetic second fixedlayer, and the isolation layer may be divided into first isolation layer and second isolationlayer. The ferromagnetic first fixed layer may be arranged on one of opposed principalsurfaces of the ferromagnetic free layer with the first isolation layer in between, and theferromagnetic second fixed layer may be arranged on the other of the opposed principalsurfaces of the ferromagnetic free layer with the second isolation layer in between. Theelement holds recorded magnetization and can reverse magnetization with a smallcurrent density.

申请人：Akira Saito

地址：Yokosuka City JP

国籍：JP

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