专利名称：Semiconductor device having trench gate
structure and method for manufacturing thesame
发明人：Takaaki Aoki申请号：US10790211申请日：20040302
公开号：US20040173845A1公开日：20040909
专利附图：
摘要：A method for manufacturing a semiconductor device includes the steps of:forming a trench in a substrate; forming a conductive film in the trench through an
insulation film; and annealing the substrate at an annealing temperature after the step offorming the conductive film so that a damage in the insulation film is removed at theannealing temperature. The device
申请人：DENSO CORPORATION
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