ZVN4210A资料

ISSUE 2 – MARCH 94FEATURES

*100 Volt VDS*RDS(on)= 1.5Ω

*Spice model available

ZVN4210AD G SE-LineTO92 CompatibleABSOLUTE MAXIMUM RATINGS.PARAMETERDrain-Source VoltageContinuous Drain Current at Tamb=25°CPulsed Drain CurrentGate-Source Voltage Power Dissipation at Tamb=25°COperating and Storage Temperature RangeSYMBOLVDSIDIDMVGSPtotTj:TstgVALUE1004506± 20700-55 to +150UNITVmAAVmW°CELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).PARAMETERDrain-Source BreakdownVoltageGate-Source ThresholdVoltageGate-Body LeakageZero Gate Voltage DrainCurrentOn-State Drain Current(1)Static Drain-Source On-StateResistance (1)SYMBOLMIN.BVDSSVGS(th)IGSSIDSSID(on)RDS(on)25010040124820302.51.51.81000.82.410010100MAX.UNITCONDITIONS.VVnAµAµAAΩmSpFpFpFnsnsnsnsVDD ≈25V, ID=1.5AVDS=25V, VGS=0V, f=1MHzID=1mA, VGS=0VID=1mA, VDS= VGSVGS=± 20V, VDS=0VVDS=100V, VGS=0VDS=80V, VGS=0V, T=125°C(2)VDS=25V, VGS=10VVGS=10V,ID=1.5AVGS=5V,ID=500mAVDS=25V,ID=1.5AForward Transconductance(1)(2gfs)Input Capacitance (2)Common Source OutputCapacitance (2)Reverse Transfer Capacitance(2)Turn-On Delay Time (2)(3)Rise Time (2)(3)Turn-Off Delay Time (2)(3)Fall Time (2)(3)CissCossCrsstd(on)trtd(off)tf3-388

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ZVN4210ATYPICAL CHARACTERISTICSRDS(on)-Drain Source On Resistance (Ω)100 3.5V VGS=3V 5V6V8V 10V 5VGS=10V 9V8V7V6V5V4V3.5V3V2.5V2V10 ID - Drain Current (Amps)4321001234567 10 10.11.010VDS - Drain Source Voltage (Volts)ID-Drain Current (Amps)Saturation Characteristics On-resistance v drain current 2.61000Normalised RDS(on)and VGS(th) 2.42.22.01.81.61.41.21.00.80.6-50-250gfs-Transconductance (mS) ceuroSn-aiVGS=VDSDrGate ID=1mAThreshold Voltage Ve RsisRe ncat n)(oDS900800700600500400300200100 0012345 VDS=10VVGS=10VID=1.5AGS(TH) 255075100125150175200225Tj-Junction Temperature (°C)ID(on)- Drain Current (Amps)Normalised RDS(on)and VGS(th)v Temperature Transconductance v drain current 16VGS-Gate Source Voltage (Volts) 200VDD= 20V50V 80V ID=1.5A1412108200C-Capacitance (pF) 16012080 Ciss40 0CossCrss100020406080123456VDS-Drain Source Voltage (Volts)Q-Charge (nC)Capacitance v drain-source voltage Gate charge v gate-source voltage 3-3