SA58670
2.1 W/channel stereo Class D audio amplifier
Rev. 01 — 22 June 2007
Objective data sheet
1.General description
The SA58670 is a stereo, filter-free ClassD audio amplifier which is available in an HVQFN20 package with the exposed Die Attach Paddle (DAP).
The SA58670 features independent shutdown controls for each channel. The gain may be set at 6dB, 12dB, 18dB or 24dB utilizing G0 and G1 gain select pins. Improved
immunity to noise and RF rectification is increased by high PSRR and differential circuit topology. Fast start-up time and small package, makes it an ideal choice for both cellular handsets and PDAs.
The SA58670 delivers 1.4W/channel at 5V and 720mW/channel at 3.6V into 8Ω. It delivers 2.1W/channel at 5V into 4Ω. The maximum power efficiency is excellent at 70% to 74% into 4Ω and 84% to 88% into 8Ω. The SA58670 provides thermal and short circuit shutdown protection.
2.Features
Output power
2.1W/channel into 4Ω at 5V1.4W/channel into 8Ω at 5V720mW/channel into 8Ω at 3.6VPower supply range: 2.5V to 5.5V
Independent shutdown control for each channelSelectable gain of 6dB, 12dB, 18dB and 24dBHigh PSSR: 77dB at 217HzFast start-up time of 3.5msLow supply currentLow shutdown current
Short-circuit and thermal protection
Space savings with 4mm×4mm HVQFN20 package
Low junction to ambient thermal resistance of 24K/W with exposed die attach paddle
3.Applications
Wireless and cellular handsets and PDAsPortable DVD playerUSB speakersNotebook PC
Portable radio and gaming
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NXP Semiconductors
SA58670
2.1 W/channel stereo Class D audio amplifier
Educational toys
4.Ordering information
Table 1.Ordering information
Package Name
Description
plastic thermal enhanced very thin quad flat package; noleads; 20terminals; body 4×4×0.85mm
VersionSOT917-1
HVQFN20
Type numberSA58670BS
5.Block diagram
SA58670INRPINRNVDDto batteryOUTRPGAINADJUSTPWMH −BRIDGEOUTRNright inputINTERNALOSCILLATORGNDleft inputINLPINLNOUTLPGAINADJUSTPWMH −BRIDGEOUTLNG0G1SDR300 kΩBIASCIRCUITRYSHORT-CIRCUITPROTECTIONSDL300 kΩ002aac765Refer to Table6 for gain selection.Fig 1.Block diagramSA58670_1© NXP B.V. 2007. All rights reserved.
Objective data sheetRev. 01 — 22 June 2007 2 of 18
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NXP Semiconductors
SA58670
2.1 W/channel stereo Class D audio amplifier
6.Pinning information
6.1Pinning
18AGND17INRNterminal 1index areaG1OUTLPPVDDPGNDOUTLN12345n.c.106789(1)16INRP15G014OUTRP13PVDD12PGND11OUTRNSA58670BSn.c.SDL19INLN20INLPSDRAVDD002aac766Transparent top view(1)Exposed DAP.Fig 2.Pin configuration for HVQFN206.2Pin description
Table 2.SymbolG1OUTLPPVDDPGNDOUTLNn.c.SDLSDRAVDDOUTRNOUTRPG0INRPINRNAGNDINLNINLP-
Pin description
Pin123, 134, 1256, 107891114151617181920(DAP)
Descriptiongain select (MSB)left channel positive output
power supply (level same as AVDD)power ground
left channel negative outputnot connected
left channel shutdown (activeLOW)right channel shutdown (activeLOW)analog supply (level same as PVDD)right channel negative outputright channel positive outputgain select (LSB)
right channel positive inputright channel negative inputanalog ground
left channel negative inputleft channel positive input
exposed die attach paddle; connect to ground plane heat spreader
SA58670_1© NXP B.V. 2007. All rights reserved.
Objective data sheetRev. 01 — 22 June 2007 3 of 18
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NXP Semiconductors
SA58670
2.1 W/channel stereo Class D audio amplifier
7.Limiting values
Table 3.Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).SymbolVDDVIPtotP
Parametersupply voltageinput voltage
total power dissipationpower dissipation
continuousderating factor 41.6mW/°CTamb=25°CTamb=75°CTamb=85°C
TambTjTstgESDESDVSD(max)
ambient temperature junction temperaturestorage temperatureHuman body modelMachine modelShutdown pin voltage maximum voltage
operating in free airoperating
---−40−40−652200GND
VDD5.23.122.7+85+150+85
WWW°C°C°CkVVV
Conditionsactive modeshutdown mode
Min−0.3−0.3−0.3 Max+6.0+7.0VDD+0.3 UnitVVVW SA58670_1© NXP B.V. 2007. All rights reserved. Objective data sheetRev. 01 — 22 June 2007 4 of 18 元器件交易网www.cecb2b.com NXP Semiconductors SA58670 2.1 W/channel stereo Class D audio amplifier 8.Static characteristics Table 4.Static characteristics Tamb=25°C, unless otherwise specified.Symbol|VO(offset)| Parameter output offset voltage Conditions Min Typ5 Max10 UnitmV measured differentially; inputs -AC grounded; Gv=6dB; VDD=2.5Vto5.5VVDD=2.5Vto5.5Vinputs are shorted together; VDD=2.5Vto5.5VVDD=5.5V;VI=VDDVDD=5.5V;VI=0V VDD=5.5V; noload VDD=3.6V; noloadVDD=2.5V; noload ISDVSDRDSon shutdown currentshutdown voltage input drain-source on-state resistance no input signal, VSD = GNDdevice ONdevice OFFstatic; VDD=5.5Vstatic; VDD=3.6Vstatic; VDD=2.5V Zo(sd)fswGv(cl) shutdown mode output impedanceswitching frequencyclosed-loop voltage gain VSDR, VSDL = 0.35VVDD=2.5V to 5.5VG0, G1 = 0.35VG0 = VDD; G1 = 0.35VG0 = 0.35V; G1 = VDDG0 = VDD; G1 = VDD GND----2505.511.517.523.5 50057070023006121824 -0.5------PSRRVi(cm)CMRRIIHIILIDD power supply rejection ratiocommon-mode input voltagecommon mode rejection ratioHIGH-level input currentLOW-level input currentsupply current −75-−69--65410VDD/2 −55VDD−0.8−5050597.5610000.4----3506.512.518.524.5 dBVdBµAµAmAmAmAnAVVmΩmΩmΩkΩkHzdBdBdBdB SA58670_1© NXP B.V. 2007. All rights reserved. Objective data sheetRev. 01 — 22 June 2007 5 of 18 元器件交易网www.cecb2b.com NXP Semiconductors SA58670 2.1 W/channel stereo Class D audio amplifier 9.Dynamic characteristics Table 5.Dynamic characteristics Tamb=25°C; RL=8Ω; unless otherwise specified.SymbolPo Parameteroutput power Conditions per channel; f=1kHz; THD+N=10%RL=8Ω; VDD=5.0VRL=8Ω; VDD= 3.6VRL=4Ω; VDD=5.0V THD+N total harmonic distortion-plus-noise VDD=5V; Gv=6dB; f=1kHzPo=1WPo=0.5W SVRR supply voltage ripple rejection Gv=6dB; f=217HzVDD=5VVDD=3.6V CMRRZi common mode rejection VDD=5V; Gv=6dB; f=217Hzratio input impedance Gv=6dBGv=12dBGv=18dBGv=24dB td(sd-startup)Vn(o) delay time from shutdown to start-upnoise output voltage VDD=3.6V VDD=3.6V; f=20Hzto20kHz; inputsare AC groundedno weightingA weighting --3527 --µVµV --------−77−73−6928.117.39.85.23.5 --------dBdBdBkΩkΩkΩkΩms --0.140.11 --%% ---1.40.722.1 ---WWW Min Typ Max Unit SA58670_1© NXP B.V. 2007. All rights reserved. Objective data sheetRev. 01 — 22 June 2007 6 of 18 元器件交易网www.cecb2b.com NXP Semiconductors SA58670 2.1 W/channel stereo Class D audio amplifier 10.Typical performance curves 100THD+N(%)10(1)(2)002aac767100THD+N(%)10(1)(2)002aac768110.10.010.11Po (W)100.10.010.11Po (W)10(1)VDD = 3.6V; RL=4Ω; f=1kHz; Gv=24dB(2)VDD = 5V; RL=4Ω; f=1kHz; Gv=24dB(1)VDD = 3.6V; RL=8Ω; f=1kHz; Gv=24dB(2)VDD = 5V; RL=8Ω; f=1kHz; Gv=24dBa.4Ω loadFig 3.THD+N versus output powerb.8Ω load−60crosstalk(dB)−80SA58670, ch 1SA58670, ch 2002aac769−100ch 1ch 2−1202 k3 k4 k5 k6 k7 k8 k9 k10 kcrosstalk (Hz)20 kFig 4.Stepped all-to-one crosstalkSA58670_1© NXP B.V. 2007. All rights reserved. Objective data sheetRev. 01 — 22 June 2007 7 of 18 元器件交易网www.cecb2b.com NXP Semiconductors SA58670 2.1 W/channel stereo Class D audio amplifier −30distortionproduct ratio(dB)−50SA58670, ch 1002aac770−70SA58670, ch2−90−1102030501002003005001 k2 k3 k5 k20 k10 kf (Hz)Fig 5.Stepped distortion product ratio1 mVn(o)(RMS)(V)002aac771100 µ(1)(2)10 µ1 µ2030501002003005001 k2 k3 k5 k10 k20 kf (Hz)(1)Left channel.(2)Right channel.Fig 6.Noise output voltageSA58670_1© NXP B.V. 2007. All rights reserved. Objective data sheetRev. 01 — 22 June 2007 8 of 18 元器件交易网www.cecb2b.com NXP Semiconductors SA58670 2.1 W/channel stereo Class D audio amplifier 11.Application information 11.1Power supply decoupling considerations The SA58670 is a stereo ClassD audio amplifier that requires proper power supply decoupling to ensure the rated performance for THD+N and power efficiency. To decouple high frequency transients, power supply spikes and digital noise on the power bus line, a low Equivalent Series Resistance (ESR) capacitor, of typically 1µF is placed as close as possible to the PVDD terminals of the device. It is important to place the decoupling capacitor at the power pins of the device because any resistance or inductance in the PCB trace between the device and the capacitor can cause a loss in efficiency. Additional decoupling using a larger capacitor, 4.7µF or greater may be done on the power supply connection on the PCB to filter low frequency signals. Usually this is not required due to high PSRR of the device. 11.2Input capacitor selection The SA58670 does not require input coupling capacitors when used with a differential audio source that is biased from 0.5V to VDD−0.8V. In other words, the input signal must be biased within the common-mode input voltage range. If high pass filtering is required or if it is driven using a single-ended source, input coupling capacitors are required.The high pass corner frequency created by the input coupling capacitor and the input resistors (see Table6) is calculated by Equation1:1fC=-----------------------------2π×Ri×Ci (1) Table 6.G10011 Gain selectionG00101 Gain (V/V)24816 Gain (dB)6121824 Input impedance (kΩ)28.117.39.85.2 Since the value of the input decoupling capacitor and the input resistance determined by the gain setting affects the low frequency performance of the audio amplifier, it is important to consider in the system design. Small speakers in wireless and cellular phones usually do not respond well to low frequency signals, so the high pass corner frequency may be increased to block the low frequency signals to the speakers. Not using input coupling capacitors may increase the output offset voltage.Equation1 is solved for Ci:1Ci=----------------------------2π×Ri×fC (2) SA58670_1© NXP B.V. 2007. All rights reserved. Objective data sheetRev. 01 — 22 June 2007 9 of 18 元器件交易网www.cecb2b.com NXP Semiconductors SA58670 2.1 W/channel stereo Class D audio amplifier 11.3PCB layout considerations Component location is very important for performance of the SA58670. Place all external components very close to the device. Placing decoupling capacitors directly at the power supply pins increases efficiency because the resistance and inductance in the trace between the device power supply pins and the decoupling capacitor causes a loss in power efficiency. The trace width and routing are also very important for power output and noise considerations. For high current terminals (PVDD, PGND and audio output), the trace widths should be maximized to ensure proper performance and output power. Use at least 500µm wide traces. For the input pins (INRP/INRN and INLP/INLN), the traces must be symmetrical and run side-by-side to maximize common-mode cancellation. 11.4Filter-free operation and ferrite bead filters A ferrite bead low-pass filter can be used to reduce radio frequency emissions in applications that have circuits sensitive to greater than 1MHz. A ferrite bead low-pass filter functions well for amplifiers that must pass FCC unintentional radiation requirements at greater than 30MHz. Choose a bead with high-impedance at high frequencies and very low-impedance at low frequencies. In order to prevent distortion of the output signal, select a ferrite bead with adequate current rating. For applications in which there are circuits that are EMI sensitive to low frequency (<1MHz) and there are long leads from amplifier to speaker, it is necessary to use an LC output filter. 11.5Efficiency and thermal considerations The maximum ambient operating temperature depends on the heat transferring ability of the heat spreader on the PCB layout. In Table 3 “Limiting values”, power dissipation, the power derating factor is given as 41.6mW/°C. The device thermal resistance, Rth(j-a) is the reciprocal of the power derating factor. Convert the power derating factor to Rth(j-a) by the following equation: 11 Rth(j-a)=----------------------------------------=---------------=24 °C/W derating factor0.0413 (3) For a maximum allowable junction temperature, Tj=150°C and Rth(j-a)=24°C/W and a maximum device dissipation of 1.5W (750mW per channel) and for 2.1W per channel output power, 4Ω load, 5V supply, the maximum ambient temperature is calculated using Equation4: Tamb(max)=Tj(max)–(Rth(j-a)×PD(max))=150–(24×1.5)=114 °C (4) The maximum ambient temperature is 114°C at maximum power dissipation for 5V supply and 4Ω load. If the junction temperature of the SA58670 rises above 150°C, the thermal protection circuitry turns the device off; this prevents damage to IC. Using speakers greater than 4Ω further enhances thermal performance and battery lifetime by reducing the output load current and increasing amplifier efficiency. SA58670_1 © NXP B.V. 2007. All rights reserved. Objective data sheetRev. 01 — 22 June 2007 10 of 18 元器件交易网www.cecb2b.com NXP Semiconductors SA58670 2.1 W/channel stereo Class D audio amplifier 11.6Additional thermal information The SA58670 HVQFN20 package incorporates an exposed die attach paddle (DAP) that is designed to solder mount directly to the PCB heat spreader. By the use of thermal vias, the DAP may be soldered directly to a ground plane or special heat sinking layer designed into the PCB. The thickness and area of the heat spreader may be maximized to optimize heat transfer and achieve lowest package thermal resistance. SA58670_1© NXP B.V. 2007. All rights reserved. Objective data sheetRev. 01 — 22 June 2007 11 of 18 元器件交易网www.cecb2b.com NXP Semiconductors SA58670 2.1 W/channel stereo Class D audio amplifier 12.Package outline HVQFN20: plastic thermal enhanced very thin quad flat package; no leads;20 terminals; body 4 x 4 x 0.85 mm SOT917-1 DBAterminal 1index areaEAA1cdetail Xe1e6L115Eh115terminal 1index areaee2b10vMCABwMCy1CCy20Dh16X0DIMENSIONS (mm are the original dimensions)UNITmmA(1)max.1A10.050.00b0.300.18c0.2D(1)4.13.9Dh2.452.15E(1)4.13.9Eh2.452.15e0.52.5scalee12e225 mmL0.60.4v0.1w0.05y0.05y10.1Note1. Plastic or metal protrusions of 0.075 mm maximum per side are not included. OUTLINEVERSION SOT917 -1 REFERENCES IEC- - - JEDECMO-220 JEITA- - -EUROPEANPROJECTIONISSUE DATE05-10-0805-10-31Fig 7.Package outline SOT917-1 (HVQFN20) SA58670_1 © NXP B.V. 2007. All rights reserved. Objective data sheetRev. 01 — 22 June 2007 12 of 18 元器件交易网www.cecb2b.com NXP Semiconductors SA58670 2.1 W/channel stereo Class D audio amplifier 13.Soldering This text provides a very brief insight into a complex technology. A more in-depth account of soldering ICs can be found in Application Note AN10365 “Surface mount reflow soldering description”. 13.1Introduction to soldering Soldering is one of the most common methods through which packages are attached to Printed Circuit Boards (PCBs), to form electrical circuits. The soldered joint provides both the mechanical and the electrical connection. There is no single soldering method that is ideal for all IC packages. Wave soldering is often preferred when through-hole and Surface Mount Devices (SMDs) are mixed on one printed wiring board; however, it is not suitable for fine pitch SMDs. Reflow soldering is ideal for the small pitches and high densities that come with increased miniaturization. 13.2Wave and reflow soldering Wave soldering is a joining technology in which the joints are made by solder coming from a standing wave of liquid solder. The wave soldering process is suitable for the following: •Through-hole components •Leaded or leadless SMDs, which are glued to the surface of the printed circuit board Not all SMDs can be wave soldered. Packages with solder balls, and some leadless packages which have solder lands underneath the body, cannot be wave soldered. Also, leaded SMDs with leads having a pitch smaller than ~0.6mm cannot be wave soldered, due to an increased probability of bridging. The reflow soldering process involves applying solder paste to a board, followed by component placement and exposure to a temperature profile. Leaded packages, packages with solder balls, and leadless packages are all reflow solderable.Key characteristics in both wave and reflow soldering are: •••••• Board specifications, including the board finish, solder masks and viasPackage footprints, including solder thieves and orientationThe moisture sensitivity level of the packagesPackage placementInspection and repair Lead-free soldering versus PbSn soldering 13.3Wave soldering Key characteristics in wave soldering are: •Process issues, such as application of adhesive and flux, clinching of leads, board transport, the solder wave parameters, and the time during which components are exposed to the wave •Solder bath specifications, including temperature and impurities SA58670_1 © NXP B.V. 2007. All rights reserved. Objective data sheetRev. 01 — 22 June 2007 13 of 18 元器件交易网www.cecb2b.com NXP Semiconductors SA58670 2.1 W/channel stereo Class D audio amplifier 13.4Reflow soldering Key characteristics in reflow soldering are: •Lead-free versus SnPb soldering; note that a lead-free reflow process usually leads to higher minimum peak temperatures (see Figure8) than a PbSn process, thus reducing the process window •Solder paste printing issues including smearing, release, and adjusting the process window for a mix of large and small components on one board •Reflow temperature profile; this profile includes preheat, reflow (in which the board is heated to the peak temperature) and cooling down. It is imperative that the peak temperature is high enough for the solder to make reliable solder joints (a solder paste characteristic). In addition, the peak temperature must be low enough that the packages and/or boards are not damaged. The peak temperature of the package depends on package thickness and volume and is classified in accordance with Table7 and8 Table 7.SnPb eutectic process (from J-STD-020C) Package reflow temperature (°C)Volume (mm3)< 350 ≥ 350220220 Package thickness (mm) < 2.5≥ 2.5 235220 Lead-free process (from J-STD-020C) Package reflow temperature (°C)Volume (mm3)< 350 Table 8. Package thickness (mm) 350 to 2000260250245 > 2000260245245 < 1.61.6 to 2.5> 2.5 260260250 Moisture sensitivity precautions, as indicated on the packing, must be respected at all times. Studies have shown that small packages reach higher temperatures during reflow soldering, see Figure8. SA58670_1© NXP B.V. 2007. All rights reserved. Objective data sheetRev. 01 — 22 June 2007 14 of 18 元器件交易网www.cecb2b.com NXP Semiconductors SA58670 2.1 W/channel stereo Class D audio amplifier temperaturemaximum peak temperature= MSL limit, damage levelminimum peak temperature= minimum soldering temperaturepeak temperaturetime001aac844MSL: Moisture Sensitivity LevelFig 8.Temperature profiles for large and small componentsFor further information on temperature profiles, refer to Application Note AN10365 “Surface mount reflow soldering description”. 14.Abbreviations Table 9.AcronymDAPDVDEMIESRFCCLCLSBMSBPCPCBPDAPWMUSB Abbreviations DescriptionDie Attach PaddleDigital Video Disc ElectroMagnetic InterferenceEquivalent Series ResistanceFederal Communications Commissioninductor-capacitor filterLeast Significant BitMost Significant BitPersonal ComputerPrinted-Circuit BoardPersonal Digital AssistantPulse Width ModulatorUniversal Serial Bus SA58670_1© NXP B.V. 2007. All rights reserved. Objective data sheetRev. 01 — 22 June 2007 15 of 18 元器件交易网www.cecb2b.com NXP Semiconductors SA58670 2.1 W/channel stereo Class D audio amplifier 15.Revision history Table 10.Revision history Release date20070622 Data sheet statusObjective data sheet Change notice-Supersedes- Document IDSA58670_1 SA58670_1© NXP B.V. 2007. All rights reserved. Objective data sheetRev. 01 — 22 June 2007 16 of 18 元器件交易网www.cecb2b.com NXP Semiconductors SA58670 2.1 W/channel stereo Class D audio amplifier 16.Legal information 16.1Data sheet status Document status[1][2]Objective [short] data sheetPreliminary [short] data sheetProduct [short] data sheet [1][2][3] Product status[3]DevelopmentQualificationProduction Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. Please consult the most recently issued document before initiating or completing a design. The term ‘short data sheet’ is explained in section “Definitions”. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URLhttp://www.nxp.com. 16.2Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. malfunction of a NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 16.3Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or 16.4Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 17.Contact information For additional information, please visit: http://www.nxp.com For sales office addresses, send an email to: salesaddresses@nxp.com SA58670_1© NXP B.V. 2007. All rights reserved. Objective data sheetRev. 01 — 22 June 2007 17 of 18 元器件交易网www.cecb2b.com NXP Semiconductors 18.Contents 1General description. . . . . . . . . . . . . . . . . . . . . . 12Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13Applications. . . . . . . . . . . . . . . . . . . . . . . . . . . . 14Ordering information. . . . . . . . . . . . . . . . . . . . . 25Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 26Pinning information. . . . . . . . . . . . . . . . . . . . . . 36.1Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36.2Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 37Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 48Static characteristics. . . . . . . . . . . . . . . . . . . . . 59Dynamic characteristics. . . . . . . . . . . . . . . . . . 610Typical performance curves. . . . . . . . . . . . . . . 711Application information. . . . . . . . . . . . . . . . . . . 911.1Power supply decoupling considerations . . . . . 911.2Input capacitor selection. . . . . . . . . . . . . . . . . . 911.3PCB layout considerations. . . . . . . . . . . . . . . 1011.4Filter-free operation and ferrite bead filters. . . 1011.5Efficiency and thermal considerations . . . . . . 1011.6Additional thermal information . . . . . . . . . . . . 1112Package outline. . . . . . . . . . . . . . . . . . . . . . . . 1213Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1313.1Introduction to soldering. . . . . . . . . . . . . . . . . 1313.2Wave and reflow soldering. . . . . . . . . . . . . . . 1313.3Wave soldering. . . . . . . . . . . . . . . . . . . . . . . . 1313.4Reflow soldering. . . . . . . . . . . . . . . . . . . . . . . 1414Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 1515Revision history. . . . . . . . . . . . . . . . . . . . . . . . 1616Legal information. . . . . . . . . . . . . . . . . . . . . . . 1716.1Data sheet status . . . . . . . . . . . . . . . . . . . . . . 1716.2Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 1716.3Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 1716.4Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 1717Contact information. . . . . . . . . . . . . . . . . . . . . 1718 Contents. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 SA58670 2.1 W/channel stereo Class D audio amplifier Please be aware that important notices concerning this document and the product(s)described herein, have been included in section ‘Legal information’. © NXP B.V.2007.All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 22 June 2007Document identifier: SA58670_1 因篇幅问题不能全部显示,请点此查看更多更全内容