Capacitor in semiconductor device and method of ma

专利名称：Capacitor in semiconductor device and

method of manufacturing the same

发明人：An Do Ki申请号：US12492026申请日：20090625公开号：US07755127B2公开日：20100713

专利附图：

摘要：A capacitor may include at least one of a polysilicon layer over a semiconductorsubstrate; a capacitor dielectric layer over a polysilicon layer; an insulating layer over acapacitor dielectric layer; a metal layer connected to a capacitor dielectric layer through

a first region of an insulating layer; an upper metal wiring layer connected to a metallayer over an insulating layer; and/or a lower metal wiring line layer connected to apolysilicon layer through a metal contact that passes through a second region of aninsulating layer and a capacitor dielectric layer over the insulating layer.

申请人：An Do Ki

地址：Choongcheongbuk-do KR

国籍：KR

代理机构：Sherr & Vaughn, PLLC

更多信息请下载全文后查看