Method and structure for fabricating devices using

专利名称：Method and structure for fabricating devices

using one or more films provided by a layertransfer process and etch back

发明人：Francois J. Henley申请号：US11199987申请日：20050808

公开号：US20070032044A1公开日：20070208

专利附图：

摘要：A method for fabricating one or more devices using semiconductor substratewith a cleave region. The method includes providing a substrate. In a preferred

embodiment, the substrate has a thickness of semiconductor material and a surfaceregion. In a specific embodiment, the substrate also has a cleave plane (including aplurality of particles, deposited material, or any combination of these, and the like)provided within the substrate, which defines the thickness of semiconductor material. Themethod includes joining the surface region of the substrate to a first handle substrate. Ina preferred embodiment, the method includes initiating a controlled cleaving action at aportion of the cleave plane to detach the thickness of semiconductor material from thesubstrate, while the thickness of semiconductor material remains joined to the firsthandle substrate. The method includes processing the first handle substrate with thethickness of semiconductor material using one or more processes to form at least oneintegrated circuit device onto a portion of the thickness of semiconductor material. In apreferred embodiment, the processing includes high temperature semiconductorprocessing techniques to form conventional integrated circuits thereon. The methodforms a planarized surface region overlying the thickness of semiconductor material. Themethod also joins the planarized surface region to a face of a second handle substrate.The method selectively removing the first handle substrate from the thickness ofsemiconductor material, while the face of the second handle substrate remains joined tothe planarized surface region.

申请人：Francois J. Henley

地址：Aptos CA US

国籍：US

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