专利名称：Capacitor in semiconductor device and
method for fabricating the same
发明人：Duck-Hwa Hong申请号：US11114102申请日：20050426公开号：US07368300B2公开日：20080506
专利附图：
摘要：The present invention relates to a capacitor in a semiconductor device and amethod for fabricating the same. The capacitor fabrication method includes the steps of:forming a lower electrode by using a thin film of (Ba,Sr)RuO(BSR) on a substrate provided
with various device elements; forming a dielectric layer on the lower electrode by using athin film of barium strontium titanate (BST); and forming an upper electrode on thedielectric layer.
申请人：Duck-Hwa Hong
地址：Ichon-shi KR
国籍：KR
代理机构：Finnegan, Henderson, Farabow, Garrett, & Dunner, L.L.P.
更多信息请下载全文后查看
因篇幅问题不能全部显示，请点此查看更多更全内容