专利名称：Integratable semiconductor storage cell
with multi-emitter bipolar transistors
发明人：Kranzer, Ditmar, Dr.,Rydval, Peter, Dipl.-Ing.,Werner, Wolfgang, Dr.
申请号：EP80107831申请日：19801211公开号：EP0031094A3公开日：19810715
摘要：1. An integratable semiconductor storage cell having two similar bipolartransistors so connected that their collectors are each connected in series with a
respective circuit element having a non-linear current-voltage characteristic, to a commonfirst electrical supply potential, and which are also each connected to the base of therespective other of the two transistors, in which, moreover, an emitter of each of the twotransistors is connected to a common terminal for a second supply potential and in eachcase a further emitter is provided for signal control of the semiconductor storage cell,wherein furthermore each circuit element arranged between the collector of a respectiveone of the two transistors and the input carrying the first supply potential has a steeperrise at all points of its current-voltage characteristic than have the corresponding pointsof the current-voltage characteristic of the emitter-base-junction of the two transistors,characterized in that, in known manner, the tow circuit elements having a non-linearcurrent-voltage characteristic each consist of one Schottky diode only (SD1, SD2), theanode of the Schottky diode, which is in the form of a metal electrode (5), together withthe anode of the Schottky diode forming the other non-linear circuit anode being
connected to the common terminal (DW) which supplies the first supply potential, andthe cathode (3) of the Schottky diode being connected to the collector of the one and tothe base of the other transistor (T1 or T2, as the case may be) ; and that the cathodes (3)of the respective Schottky diodes (SD1, SD2) are produced from polycrystallinesemiconductor material.
申请人：Siemens Aktiengesellschaft
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