SRAM DEVICE

专利名称：SRAM DEVICE发明人：Dae Kyeun Kim申请号：US11617224申请日：20061228

公开号：US20070152279A1公开日：20070705

专利附图：

摘要：In a disclosed SRAM device, a contact connected to a source of an NMOStransistor is formed along a straight portion of an active region, rather than in a bentpart. An NMOS source contact may be positioned along the same line as that of acorresponding PMOS drain contact, and may be positioned symmetrically to an NMOS

drain contact based on a corresponding gate. NMOS source contacts may be

asymmetrically arranged. An active region has a curved portion having a rounded corner.A process margin for forming contacts over the active region may be increased, andelectric characteristics such as leakage current or standby current may be improved,thereby causing the yield of an SRAM device to be enhanced.

申请人：Dae Kyeun Kim

地址：Gyoonggi-do KR

国籍：KR

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