Field Effect Transistor and Manufacturing Method T

专利名称：Field Effect Transistor and Manufacturing

Method Thereof

发明人：MASAAKI FUJIMORI,Tomihiro

Hashizume,Masahiko Ando

申请号：US11733794申请日：20070411

公开号：US20070252229A1公开日：20071101

专利附图：

摘要：A manufacturing method of a field effect transistor in which, a patterned gateelectrode is provided on a substrate, and a gate insulator is provided on the substrateand the gate electrode, a source electrode and a drain electrode are spaced apart fromeach other on the gate insulator, a region to be a channel between the source electrodeand the drain electrode is provided, a boundary between the region and either one of thesource electrode and the drain electrode is linear, a boundary between the region andeither one of the drain electrode and the source electrode is non-linear, the boundaryhas a continuous or discontinuous shape, and the boundary part has a plurality of recessparts, the surface of the region has hydrophilicity and a peripheral region of the region

prepares a member having water-repellency, and a solution including semiconductororganic molecules is supplied to the region, and the solution is dried.

申请人：MASAAKI FUJIMORI,Tomihiro Hashizume,Masahiko Ando

地址：Hatoyama JP,Hatoyama JP,Hitachinaka JP

国籍：JP,JP,JP

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