BFP490E6327资料

SIEGET󰀁25NPN Silicon RF Transistor

BFP490󰀁 For high power amplifiers

󰀁 Compression point P-1dB = 26.5 dBm at 1.8 GHz maxim. available Gain Gma = 8.5 dB at 1.8 GHz

453󰀁 Transition frequency fT > 17 GHz󰀁 Gold metallization for high reliability󰀁 SIEGET 󰀂 25 GHz fT - Line

12VPW05980ESD: Electrostatic discharge sensitive device, observe handling precaution!

TypeBFP490

Maximum RatingsParameter

MarkingAOs

1 = B

Pin Configuration

2 = E3 = C4 = C5 = E

SymbolVCEOVCBOVEBOICIBPtotTjTATstg

PackageSCT595

UnitV

Value4.5151.5600601000150-65 ... 150-65 ... 150

Collector-emitter voltageCollector-base voltageEmitter-base voltageCollector currentBase current

Total power dissipation TS 󰀁󰀂85 °C 1)

Junction temperatureAmbient temperatureStorage temperature

mAmW°C

Thermal ResistanceJunction - soldering point2)

RthJS

󰀁 65

K/W

1T is measured on the emitter lead at the soldering point to the pcbS

2For calculation of R

thJA please refer to Application Note Thermal Resistance

1Aug-14-2001

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SIEGET󰀁25Electrical Characteristics at TA = 25°C, unless otherwise specified.ParameterDC characteristics

Collector-emitter breakdown voltage IC = 1 mA, IB = 0

Collector-base cutoff current VCB = 5 V, IE = 0

Emitter-base cutoff current VEB = 1.5 V, IC = 0 DC current gain

IC = 200 mA, VCE = 3 V

AC characteristics (verified by random sampling)Transition frequency

IC = 300 mA, VCE = 3 V, f = 0.2 GHz IC = 300 mA, VCE = 3 V, f = 0.5 GHzCollector-base capacitance VCB = 2 V, f = 1 MHz

Collector-emitter capacitance VCE = 2 V, f = 1 MHz

Emitter-base capacitance VEB = 0.5 V, f = 1 MHzNoise figure

IC = 100 mA, VCE = 2 V, ZS = ZSopt , f = 1.8 GHz

Power gain, maximum available 1)

IC = 200 mA, VCE = 2 V, ZS = ZSopt, ZL = ZLopt , f = 1.8 GHz

Insertion power gain

IC = 200 mA, VCE = 2 V, f = 0.5 GHz, ZS = ZL = 50󰀁

Third order intercept point

IC = 300 mA, VCE = 3 V, ZS=ZSopt , ZL=ZLopt , f = 1.8 GHz

1dB Compression point

IC = 300 mA, VCE = 3 V, f = 1.8 GHz, ZS=ZSopt , ZL=ZLopt

1G = |S / S| (k-(k2-1)1/2)ma2112

BFP490Symbol

min.

V(BR)CEOICBOIEBOhFE

4.5--50

Valuestyp.5--90

max.-1800400-

Unit

VnAµA-

fT

CcbCceCebF

12.5-----

17.5153.76.311.53.3

--5---

GHz

pF

dB

Gma

-8.5-

|S21|2-8.5-

IP3

-35-dBm

P-1dB

-26.5-

2Aug-14-2001

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SIEGET󰀁25SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) :Transistor Chip Data

BFP490IS =VAF =NE =VAR =NC =RBM =CJE =TF =ITF =VJC =TR =MJS =XTI =

0.45124.6651.996216.0351.3391.07541.2273.91473.27930.98321.11500

fAV-V-

BF =IKF =BR =IKR =RB =RE =VJE =XTF =PTF =MJC =CJS =XTB =FC =

114.960.7693921.040.0900332.12620.324760.932660.6166400.34153000.75835

-A-A

NF =ISE =NR =ISC =IRB =RC =MJE =VTF =CJC =XCJC =VJS =EG =TNOM

RS =

1.14721.5911.35313.74790.176830.107370.368850.273486152,10.30,751.11300

tbd

-pA-fAmA

󰀁V-deg-F--

󰀁fFpsmAVns--

󰀁-VfF-VeVK

󰀁

C'-E'-Diode Data (Berkley-SPICE 2G.6 Syntax) :

IS =tbdfAN =

tbd-

All parameters are ready to use, no scaling is necessary

Package Equivalent Circuit:

CCBLBI = LBO = LCIC’-E’-DiodeCCELCO0.850.30.150.040.390.21502.2500nHnHnHnHnHnHfFfFfFBLBOLBIB’TransistorChipE’C’CLEI = LEO = LCI = LCO = CBE = CCB = CCE = CBELEILEOEEHA07389Valid up to 3GHzThe SCT-595 package has two emitter leads. To avoid high complexity of the package equivalent circuit, both leads are combined in one electrical connection.

Extracted on behalf of Infineon Technologies AG by:Institut für Mobil-und Satellitentechnik (IMST)

For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet:http://www.infineon.com/silicondiscretes

3Aug-14-2001

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SIEGET󰀁25BFP490For non-linear simulation:

󰀂 Use transistor chip parameters in Berkeley SPICE 2G.6 syntax for all simulators.

󰀂 If you need simulation of the reverse characteristics, add the diode with the C'-E'- diode data between collector and emitter.

󰀂 Simulation of package is not necessary for frequencies < 100MHz.

For higher frequencies add the wiring of package equivalent circuit around the non-linear transistor and diode model.

Note:

󰀂 This transistor is constructed in a common emitter configuration. This feature causes an additional reverse biased diode between emitter and collector, which does not effect normal operation.

CBEEEHA07307Transistor Schematic Diagram

The common emitter configuration shows the following advantages:

󰀂 Higher gain because of lower emitter inductance.

󰀂 Power is dissipated via the grounded emitter leads, because the chip is mounted on copper emitter leadframe.

Please note, that the broadest lead is the emitter lead..

4Aug-14-2001

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Total power dissipation Ptot = f (TS)

1200 mW1000 900 to800 t700 600 500 400 300 200 100 0 020406080100120°C150TSPermissible Pulse Load RthJS = f (tp)

10 2 K/W

SJht10 1 0.50.20.10.050.020.010.005D = 010 0 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 s10 0

tpSIEGET󰀁25BFP490Transition frequency fT = f (IC)f = 200 MHz

VCE = parameter in V

20 GHz

3116 0.514 Tf12 10 8 6 4 2 0 050100150200250300350400mA500ICPermissible Pulse Load Ptotmax/PtotDC = f (tp)

10 2 CDtotP- / xamtoD = 0tP0.0050.0110 1 0.020.050.10.20.510 0 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 s10 0

tp5Aug-14-2001

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Power gain Gma, Gms, |S21|2 = f (f)VCE = 2 V, IC = 200 mA

dB

48 36 32 28 24 20 16 Gms12 8 4 Gma0 -4 -8 |S21|2-12 012345GHz7fPower gain Gma,Gms = f (VCE)IC=200mA

f = parameter in GHz

26 dB22 0.520 18 16 0.8114 12 1.810 28 2.56 4 2 0 00.511.522.533.5V4.5VCESIEGET󰀁25BFP490Power gain Gma, Gms = f (IC)VCE = 2V

f = parameter in GHz

24 dB20 0.518 16 0.8G14 112 10 1.88 22.56 4 2 0 050100150200250300350400mA500ICCollector-base capacitance Ccb = f (VCB) f = 1MHz

10 pFbcC6 4 2 0 00.511.522.53V4VCB6Aug-14-2001

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SIEGET󰀁25BFP490Noise figure F = f (IC)VCE = 2 V, ZS = ZSopt

6.5 dB5.5 5 4.5 4 3.5 3 2.5 2 1.5 f = 0.45 GHz1 f = 0.9 GHzf = 1.8 GHz0.5 0 050100150200250300350400mA500IC7Aug-14-2001

F