SELF-ALIGNED CONTACT STRUCTURE IN A SEMICONDUCTOR

专利名称：SELF-ALIGNED CONTACT STRUCTURE IN A

SEMICONDUCTOR DEVICE

发明人：Thomas Werner,Frank Feustel,Kai Frohberg申请号：US12176469申请日：20080721

公开号：US20090194825A1公开日：20090806

专利附图：

摘要：By forming an isolation structure that extends above the height level defined bythe semiconductor material of an active region, respective recesses may be defined incombination with gate electrode structures of the completion of basic transistor

structures. These recesses may be subsequently filled with an appropriate contactmaterial, thereby forming large area contacts in a self-aligned manner without requiringdeposition and patterning of an interlayer dielectric material. Thereafter, the firstmetallization layer may be formed, for instance, on the basis of well-establishedtechniques wherein the metal lines may connect directly to respective “large area”contact elements.

申请人：Thomas Werner,Frank Feustel,Kai Frohberg

地址：Reichenberg DE,Dresden DE,Niederau DE

国籍：DE,DE,DE

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