专利名称：Method for the production of reflectors发明人：Ulrich Papenburg,Peter Goedtke,Ernst
Blenninger
申请号：US08/025145申请日：19930302公开号：US05505805A公开日：19960409
摘要：For the production of lightweight reflectors or mirror structures, metallicsilicon of sufficient thickness is applied to a CFC or CMC substrate preform structurehaving the dimensions of the component to be produced by a heat treatment process, inparticular at temperatures between 1300° C. and 1600° C. and in a vacuum or in a
protective atmosphere. In this way, reflectors or mirror structures are formed directly. Itis possible to work at temperatures of 300°- 600° C. when the silicon is applied in theform of wafers which are joined to the substrate preform by way a zone of a melteutectic incorporating a nonferrous metal. Preferably the nonferrous metal is gold.
申请人：INDUSTRIEANLAGEN-BETRIEBSGESELLSCHAFT GMBH
代理机构：Marshall, O'Toole, Gerstein, Murray & Borun
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