PSMN1R5-30YLC

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PSMN1R5-30YLC

N-channel 30 V 1.55mΩ logic level MOSFET in LFPAK using NextPower technology

Rev. 2 — 17 May 2011

Product data sheet

1.Product profile

1.1General description

Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.

1.2Features and benefits

󰂄High reliability Power SO8 package, qualified to 175°C󰂄Optimised for 4.5V Gate drive utilising NextPower Superjunction technology

󰂄Ultra low QG, QGD, and QOSS for high system efficiencies at low and high loads󰂄Ultra low Rdson and low parasitic inductance

1.3Applications

󰂄DC-to-DC converters󰂄Lithium-ion battery protection󰂄Load switching

󰂄Power OR-ing󰂄Server power supplies󰂄Sync rectifier

1.4Quick reference data

Table 1.SymbolVDSIDPtotTj

Quick reference dataParameterdrain-source voltagedrain currenttotal power dissipationjunction temperaturedrain-source

on-state resistance

VGS=4.5V;ID=25A;Tj=25°C; see Figure 12

VGS=10V; ID=25A; Tj=25°C; see Figure 12Conditions25°C≤Tj≤175°CTmb=25°C; VGS=10V; see Figure 1

Tmb=25°C; see Figure 2

[1]

Min----55

Typ----

MaxUnit30100179175

VAW°C

Static characteristicsRDSon

--1.652.05mΩ1.3

1.55mΩ

Nexperia

PSMN1R5-30YLC

N-channel 30 V 1.55mΩ logic level MOSFET in LFPAK using NextPower

Table 1.SymbolQGD

Quick reference data …continuedParametergate-drain charge

Conditions

VGS=4.5V; ID=25A; VDS=15V; see Figure 14; see Figure 15

Min-Typ8.6

MaxUnit-nC

Dynamic characteristics

QG(tot)

total gate charge-30-nC

[1]Continuous current is limited by package.

2.Pinning information

Table 2.Pin1234mb

Pinning informationSymbolDescriptionSSSGD

sourcesourcesourcegate

mounting base; connected to drain

1234

DSimplified outlineGraphic symbol

Gmbb076SSOT669 (LFPAK; Power-SO8)

3.Ordering information

Table 3.

Ordering information

PackageName

PSMN1R5-30YLC

LFPAK; Power-SO8

Description

plastic single-ended surface-mounted package; 4 leads

VersionSOT669

Type number

4.Marking

Table 4.

Marking codes

Marking code[1]1C530L

Type numberPSMN1R5-30YLC

[1]

% = placeholder for manufacturing site code

PSMN1R5-30YLCAll information provided in this document is subject to legal disclaimers.

Product data sheetRev. 2 — 17 May 20112 of 15

Nexperia

PSMN1R5-30YLC

N-channel 30 V 1.55mΩ logic level MOSFET in LFPAK using NextPower

5.Limiting values

Table 5.SymbolVDSVDGRVGSIDIDMPtotTstgTjTsld(M)VESDISISMEDS(AL)S

Limiting values

Parameter

drain-source voltagedrain-gate voltagegate-source voltagedrain currentpeak drain currenttotal power dissipationstorage temperaturejunction temperaturepeak soldering temperatureelectrostatic discharge voltagesource currentpeak source currentnon-repetitive drain-source avalanche energy

MM (JEDEC JESD22-A115)Tmb=25°C

pulsed; tp≤10µs; Tmb=25°CVGS=10V; Tj(init)=25°C; ID=100A; Vsup≤30V; RGS=50Ω; unclamped; see Figure 3

[1]

In accordance with the Absolute Maximum Rating System (IEC 60134).

Conditions25°C≤Tj≤175°C

25°C≤Tj≤175°C; RGS=20kΩVGS=10V; Tmb=25°C; see Figure 1VGS=10V; Tmb=100°C; see Figure 1pulsed; tp≤10µs; Tmb=25°C; see Figure 4

Tmb=25°C; see Figure 2

[1][1]

Min---20-----55-55-1000---

Max3030201001001008179175175260-1001008147

UnitVVVAAAW°C°C°CVAAmJ

Source-drain diode

Avalanche ruggedness

[1]Continuous current is limited by package.

300ID (A)240003aaf644120Pder(%)8003na19180120(1)40600050100150200Tmb (°C)0050100150Tmb (°C)200Fig 1.Continuous drain current as a function of mounting base temperatureFig 2.Normalized total power dissipation as a function of mounting base temperature© Nexperia B.V. 2017. All rights reserved

PSMN1R5-30YLCAll information provided in this document is subject to legal disclaimers.

Product data sheetRev. 2 — 17 May 20113 of 15

Nexperia

PSMN1R5-30YLC

N-channel 30 V 1.55mΩ logic level MOSFET in LFPAK using NextPower

103IAL(A) 102(1)003aaf 658(2) 10 110-110-310-210-1 1 10tAL (ms)Fig 3. 104ID(A) 103Single pulse avalanche rating; avalanche current as a function of avalanche time003aaf645Limit RDSon = VDS / IDtp =10 μs 102100 μs1 ms 10DC 10 ms100 ms 110-110-1 1 10VDS (V) 102Fig 4.Safe operating area; continuous and peak drain currents as a function of drain-source voltagePSMN1R5-30YLCAll information provided in this document is subject to legal disclaimers.

Product data sheetRev. 2 — 17 May 20114 of 15

Nexperia

PSMN1R5-30YLC

N-channel 30 V 1.55mΩ logic level MOSFET in LFPAK using NextPower

6.Thermal characteristics

Table 6.SymbolRth(j-mb)

Thermal characteristics

Parameter

thermal resistance from junction to mounting base

Conditionssee Figure 5

Min-

Typ0.71

Max0.84

UnitK/W

1Zth(j-mb) (K/W)10-1003aaf 646d = 0.5 0.20.10.050.0210-2Pδ =single shottpTtpTt10-310-610-510-410-310-210-1tp (s) 1Fig 5.Transient thermal impedance from junction to mounting base as a function of pulse durationPSMN1R5-30YLCAll information provided in this document is subject to legal disclaimers.

Product data sheetRev. 2 — 17 May 20115 of 15

Nexperia

PSMN1R5-30YLC

N-channel 30 V 1.55mΩ logic level MOSFET in LFPAK using NextPower

7.Characteristics

Table 7.SymbolV(BR)DSSVGS(th)

Characteristics

Parameter

drain-source breakdown voltage

gate-source threshold voltage

Conditions

ID=250µA;VGS=0V; Tj=25°CID=250µA;VGS=0V; Tj=-55°CID=1mA; VDS=VGS; Tj=25°C; see Figure 10; see Figure 11ID=10mA;VDS=VGS; Tj=150°CID=1mA; VDS=VGS; Tj=-55°C

IDSSIGSSRDSon

drain leakage currentgate leakage currentdrain-source on-state resistance

VDS=30V;VGS=0V; Tj=25°CVDS=30V;VGS=0V; Tj=150°CVGS=16V; VDS=0V; Tj=25°CVGS=-16V;VDS=0V; Tj=25°CVGS=4.5V;ID=25A;Tj=25°C; see Figure 12

VGS=4.5V;ID=25A;Tj=150°C; see Figure 12; see Figure 13VGS=10V; ID=25A; Tj=25°C; see Figure 12

VGS=10V; ID=25A; Tj=150°C; see Figure 12; see Figure 13

RGQG(tot)

gate resistancetotal gate charge

f=1MHz

ID=25A; VDS=15V;VGS=10V; see Figure 14; see Figure 15ID=25A; VDS=15V;VGS=4.5V; see Figure 14; see Figure 15ID=0A;VDS=0V; VGS=10V

QGSQGS(th)QGS(th-pl)QGDVGS(pl)CissCossCrsstd(on)trtd(off)tf

PSMN1R5-30YLC

Min30271.050.5-----------------

Typ--1.51------1.65-1.3-1.056530539.76.63.18.62.53404486028733626238

Max--1.95-2.2511001001002.053.41.552.62.1---------------

UnitVVVVVµAµAnAnAmΩmΩmΩmΩΩnCnCnCnCnCnCnCVpFpFpFnsnsnsns

Static characteristics

Dynamic characteristics

gate-source chargepre-threshold gate-source charge

post-threshold gate-source charge

gate-drain charge

gate-source plateau voltageinput capacitanceoutput capacitance

reverse transfer capacitanceturn-on delay timerise time

turn-off delay timefall time

ID=25A; VDS=15V;VGS=4.5V; see Figure 14; see Figure 15

ID=25A;VDS=15V; see Figure 14; see Figure 15

VDS=15V;VGS=0V; f=1MHz; Tj=25°C;seeFigure 16

--------

VDS=15V;RL=0.6Ω; VGS=4.5V; RG(ext)=4.7Ω

All information provided in this document is subject to legal disclaimers.

Product data sheetRev. 2 — 17 May 20116 of 15

Nexperia

PSMN1R5-30YLC

N-channel 30 V 1.55mΩ logic level MOSFET in LFPAK using NextPower

Table 7.SymbolQoss

Characteristics …continued

Parameteroutput charge

Conditions

VGS=0V;VDS=15V; f=1MHz; Tj=25°C

IS=25A;VGS=0V;Tj=25°C; see Figure 17

IS=25A;dIS/dt=-100A/µs; VGS=0V;VDS=15V

VGS=0V;IS=25A;

dIS/dt=-100A/µs; VDS=15V; see Figure 18

Min-Typ23

Max-UnitnC

Source-drain diodeVSDtrrQrtatb

source-drain voltagereverse recovery timerecovered chargereverse recovery rise timereverse recovery fall time

-----

0.841432417

1.1----

VnsnCnsns

100ID(A)80003aaf 6473.02.82.64.510RDSon(mΩ)8003aaf 64810602.4404620VGS (V) = 2.2 2000.511.5VDS (V)2004812VGS (V)16Fig 6.Output characteristics; drain current as a function of drain-source voltage; typical valuesFig 7.Drain-source on-state resistance as a function of gate-source voltage; typical valuesPSMN1R5-30YLCAll information provided in this document is subject to legal disclaimers.

Product data sheetRev. 2 — 17 May 20117 of 15

Nexperia

PSMN1R5-30YLC

N-channel 30 V 1.55mΩ logic level MOSFET in LFPAK using NextPower

240gfs(S)180003aaf 653100ID(A)80003aaf 65560120406020Tj = 150 °CTj = 25 °C00255075ID (A)10000123VGS (V)4Fig 8.Forward transconductance as a function of drain current; typical valuesFig 9.Transfer characteristics; drain-source current as a function of gate-source voltage; typical values3003aaf 65110-1ID (A)10-2Min10-3003aaf 652VGS(th) (V)TypMax2Max (1mA)ID = 5mA1mA10-41Min (5mA)10-510-6012VGS (V)30-60060120Tj (°C)180Fig 10.Sub-threshold drain current as a function of gate-source voltageFig 11.Gate-source threshold voltage as a function of junction temperaturePSMN1R5-30YLCAll information provided in this document is subject to legal disclaimers.

Product data sheetRev. 2 — 17 May 20118 of 15

Nexperia

PSMN1R5-30YLC

N-channel 30 V 1.55mΩ logic level MOSFET in LFPAK using NextPower

8RDSon(mΩ)62.6003aaf 6492a003aaf 650VGS (V) = 2.8 1.510VVGS=4.5V43.03.5124.50100.50255075ID (A)1000-60060120Tj (°C)180Fig 12.Drain-source on-state resistance as a function of drain current; typical valuesFig 13.Normalized drain-source on-state resistance factor as a function of junction temperature10VGS(V)003aaf 656VDSIDVGS(pl)86VGS(th)VGSQGS1QGS2QGDQG(tot)003aaa50824V415VVDS = 6V2QGS00204060QG (nC)80Fig 14.Gate charge waveform definitionsFig 15.Gate-source voltage as a function of gate charge; typical valuesPSMN1R5-30YLCAll information provided in this document is subject to legal disclaimers.

Product data sheetRev. 2 — 17 May 20119 of 15

Nexperia

PSMN1R5-30YLC

N-channel 30 V 1.55mΩ logic level MOSFET in LFPAK using NextPower

104003aaf 654100IS(A)003aaf 657C (pF)Ciss8060 103Coss40Tj = 150 °CCrss20Tj = 25 °C 10210-1 1 10VDS (V) 102000.30.60.9VSD (V)1.2Fig 16.Input, output and reverse transfer capacitances as a function of drain-source voltage; typical valuesFig 17.Source current as a function of source-drain voltage; typical values003aaf 444ID (A)trrta0tb0.25 IRMIRMt (s)Fig 18.Reverse recovery timing definitionPSMN1R5-30YLCAll information provided in this document is subject to legal disclaimers.

Product data sheetRev. 2 — 17 May 201110 of 15

Nexperia

PSMN1R5-30YLC

N-channel 30 V 1.55mΩ logic level MOSFET in LFPAK using NextPower

8.Package outline

Plastic single-ended surface-mounted package (LFPAK; Power-SO8); 4 leadsSOT669

Eb2L1Ac2A2CE1b3mountingbaseD1HDb4L21e23b1/2 e4wMAcXAA1C(A )3θdetail XLyC02.5scale5 mmDIMENSIONS (mm are the original dimensions)UNITmmAA1A2A3bb2b32.22.0b40.90.7cc2D(1)D1(1)E(1)E1(1)max5.04.83.33.1e1.27H6.25.8L0.850.40L11.30.8L21.30.8w0.25y0.1θ8°0°1.200.151.100.504.410.251.010.000.950.353.620.250.304.104.200.190.243.80Note1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. OUTLINEVERSIONSOT669 REFERENCES IECJEDECMO-235 JEITAEUROPEANPROJECTIONISSUE DATE06-03-1611-03-25Fig 19.Package outline SOT669 (LFPAK; Power-SO8)

PSMN1R5-30YLC

All information provided in this document is subject to legal disclaimers.

Product data sheetRev. 2 — 17 May 201111 of 15

Nexperia

PSMN1R5-30YLC

N-channel 30 V 1.55mΩ logic level MOSFET in LFPAK using NextPower

9.Revision history

Table 8.

Revision history

Release date20110517

Data sheet statusProduct data sheetProduct data sheet

Change notice--Supersedes

PSMN1R9-25YLC v.1-Document IDPSMN1R5-30YLC v.2Modifications:PSMN1R9-25YLC v.1

•

Various changes to content.

20110502

PSMN1R5-30YLCAll information provided in this document is subject to legal disclaimers.

Product data sheetRev. 2 — 17 May 201112 of 15

Nexperia

PSMN1R5-30YLC

N-channel 30 V 1.55mΩ logic level MOSFET in LFPAK using NextPower

10.Legal information

10.1Data sheet status

Document status [1] [2] Objective [short] data sheet

Product status [3] Development

Definition

This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification.

Preliminary [short] data sheet Qualification Product [short] data sheet

[1][2][3]

Production

Please consult the most recently issued document before initiating or completing a design.The term 'short data sheet' is explained in section \"Definitions\".

The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nexperia.com.10.2Definitions

Preview — The document is a preview version only. The document is still subject to formal approval, which may result in modifications or additions. Nexperia does not give any representations or warranties as to

the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information.

Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. Nexperia does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liability for the consequences of use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local Nexperia sales

office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.

Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between Nexperia and its customer, unless Nexperia and

customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the Nexperia product is

deemed to offer functions and qualities beyond those described in the Product data sheet.

Right to make changes — Nexperia reserves the right to make changes to information published in this document, including without

limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof.

Suitability for use — Nexperia products are not designed,

authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of a Nexperia product can reasonably be expected

to result in personal injury, death or severe property or environmental damage. Nexperia accepts no liability for inclusion and/or use of Nexperia products in such equipment or applications and

therefore such inclusion and/or use is at the customer’s own risk.

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding.Applications — Applications that are described herein for any of these products are for illustrative purposes only. Nexperia makes no

representation or warranty that such applications will be suitable for the specified use without further testing or modification.

Customers are responsible for the design and operation of their applications and products using Nexperia products, and Nexperia

accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the Nexperia product is suitable and fit for the customer’s applications and

products planned, as well as for the planned application and use of

customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products.

Nexperia does not accept any liability related to any default,

damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using Nexperia products in order to avoid a default of the applications and

the products or of the application or use by customer’s third party customer(s). Nexperia does not accept any liability in this respect.

Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device.

10.3Disclaimers

Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, Nexperia does not give any

representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information.

In no event shall Nexperia be liable for any indirect, incidental,

punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory.

Notwithstanding any damages that customer might incur for any reason whatsoever, Nexperia’s aggregate and cumulative liability towards

customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of Nexperia.

PSMN1R5-30YLCAll information provided in this document is subject to legal disclaimers.

Product data sheetRev. 2 — 17 May 201113 of 15

Nexperia

PSMN1R5-30YLC

N-channel 30 V 1.55mΩ logic level MOSFET in LFPAK using NextPower

In the event that customer uses the product for design-in and use in

automotive applications to automotive specifications and standards, customer (a) shall use the product without Nexperia’s warranty of the

product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond Nexperia’s specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies Nexperia for any

liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond Nexperia’s standard warranty and Nexperia’s product specifications.

Terms and conditions of commercial sale — Nexperia

products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nexperia.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. Nexperia hereby expressly objects to

applying the customer’s general terms and conditions with regard to the purchase of Nexperia products by customer.

No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.

Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities.

Non-automotive qualified products — Unless this data sheet expressly states that this specific Nexperia product is automotive qualified,

the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. Nexperia accepts no liability for inclusion and/or use of

non-automotive qualified products in automotive equipment or applications.

10.4Trademarks

Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners.

11.Contact information

For more information, please visit: http://www.nexperia.com

For sales office addresses, please send an email to: salesaddresses@nexperia.com

PSMN1R5-30YLCAll information provided in this document is subject to legal disclaimers.

Product data sheetRev. 2 — 17 May 201114 of 15

Nexperia

PSMN1R5-30YLC

N-channel 30 V 1.55mΩ logic level MOSFET in LFPAK using NextPower

12.Contents

1Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . .11.1General description . . . . . . . . . . . . . . . . . . . . . .11.2Features and benefits. . . . . . . . . . . . . . . . . . . . .11.3Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .11.4Quick reference data . . . . . . . . . . . . . . . . . . . . .12Pinning information. . . . . . . . . . . . . . . . . . . . . . .23Ordering information. . . . . . . . . . . . . . . . . . . . . .24Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .25Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .36Thermal characteristics . . . . . . . . . . . . . . . . . . .57Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .68Package outline. . . . . . . . . . . . . . . . . . . . . . . . .119Revision history. . . . . . . . . . . . . . . . . . . . . . . . .1210Legal information. . . . . . . . . . . . . . . . . . . . . . . .1310.1Data sheet status . . . . . . . . . . . . . . . . . . . . . . .1310.2Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .1310.3Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . .1310.4Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .14© Nexperia B.V. 2017. All rights reserved11Contact information. . . . . . . . . . . . . . . . . . . . . .14

For more information, please visit: http://www.nexperia.com

For sales office addresses, please send an email to: salesaddresses@nexperia.com Date of release:

17 May 2011

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